CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 1/6
BTC2882J3
Features
•
High breakdown voltage, BV
CEO
≥
200V
•
Large continuous collector current capability
•
Low collector saturation voltage
•
Pb-free lead plating and halogen-free package
BV
CEO
I
C
R
CESAT(MAX)
200V
1A
0.6Ω
Symbol
BTC2882J3
Outline
TO-252(DPAK)
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @T
A
=25℃
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
Tj
Tstg
Limits
250
200
7
1
200
1
10
150
-55~+150
Unit
V
V
V
A
mA
W
W
°C
°C
BTC2882J3
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
R
th,j-a
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 2/6
Value
12.5
125
Unit
°C/W
°C/W
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*V
BE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
f
T
Cob
Min.
250
200
7
-
-
-
-
-
-
160
160
120
50
-
-
Typ.
-
-
-
-
-
0.2
0.3
0.93
0.68
-
-
-
-
120
-
Max.
-
-
-
100
100
0.3
0.5
1
0.8
-
400
-
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
I
C
=10μA
I
C
=10mA
I
E
=10μA
V
CB
=200V
V
EB
=6V
I
C
=500mA, I
B
=50mA
I
C
=700mA, I
B
=35mA
I
C
=500mA, I
B
=50mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=50mA
V
CE
=2V, I
C
=100mA
V
CE
=2V, I
C
=200mA
V
CE
=5V, I
C
=700mA
V
CE
=5V, I
C
=100mA
V
CB
=10V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
BTC2882J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Recommended soldering footprint
BTC2882J3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
1000
1000
VCESAT
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 3/6
Saturation Voltage vs Collector Current
100
VCE=5V
VCE=2V
Saturation Voltage---(V)
Current Gain---HFE
100
IC=20IB
IC=10IB
10
1
10
100
Collector Current---IC(mA)
1000
10
1
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
1000
On Voltage vs Collector Current
On Voltage---(mV)
VBESAT@IC=10IB
VBEON@VCE=2V
1000
100
1
10
100
Collector Current---IC(mA)
1000
100
1
10
100
Collector Current---IC(mA)
1000
Power Derating Curve
1.2
Power Dissipation---PD(W)
Power Derating Curve
12
Power Dissipation---PD(W)
10
8
6
4
2
0
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature---TA(℃)
200
0
50
100
150
Case Temperature---TC(℃)
200
BTC2882J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 4/6
Carrier Tape Dimension
BTC2882J3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C238J3
Issued Date : 2010.06.23
Revised Date : 2011.03.08
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2882J3
CYStek Product Specification
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