CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
AUDIO MUTING APPLICATION
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 1/8
BTD1304N3
Features
•
High Emitter-Base voltage, V
EBO
=12V(min).
•
High reverse h
FE
, reverse h
FE
=20(min.) @V
CE
=2V, I
C
=4mA.
•
Low On-resistance, Ron=0.6Ω(max)@I
B
=1mA.
•
Pb-free and halogen-free package.
BV
CEO
I
C
R
CE(SAT)
20V
500mA
0.3Ω(typ)
Symbol
BTD1304N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
R
θJA
Tj
Tstg
Limit
50
20
12
500
50
225
556
150
-55~+150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
BTD1304N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
CE(sat)
*R
CE(sat)
*V
BE(sat)
*h
FE
1(FOR)
*h
FE
2(FOR)
*h
FE
3(REV)
f
T
Cob
Ron
Min.
50
20
12
-
-
-
-
-
-
200
400
20
-
-
-
Typ.
-
-
-
-
-
34
0.15
0.3
0.67
-
-
-
250
10
-
Max.
-
-
-
100
100
100
0.3
0.6
1
800
-
-
-
-
0.6
Unit
V
V
V
nA
nA
mV
V
Ω
V
-
-
-
MHz
pF
Ω
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 2/8
Test Conditions
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=12V, I
C
=0
I
C
=100mA, I
B
=10mA
I
C
=500mA, I
B
=20mA
I
C
=500mA, I
B
=20mA
I
C
=100mA, I
B
=10mA
V
CE
=2V, I
C
=4mA
V
CE
=3V, I
C
=100mA
V
CE
=2V, I
C
=4mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V, f=1MHz
Vin=0.3V, I
B
=1mA, f=1KHz
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
BTD1304N3
Package
SOT-23
(Pb-free and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Marking
MAX
BTD1304N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.6
1mA
0.5
Collector Current---IC(A)
Collector Current---IC(A)
1.4
1.2
1
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 3/8
Emitter Grounded Output Characteristics
5mA
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
500uA
400uA
300uA
200uA
IB=100uA
2mA
0.8
0.6
0.4
IB= 500uA
0.2
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
1.5mA
1mA
Emitter Grounded Output Characteristics
2
Collector Current---IC(A)
2.5
20mA
Emitter Grounded Output Characteristics
50mA
20mA
10mA
IB=5mA
1
1.5
6mA
4mA
Collector Current---IC(A)
6
2
1.5
1
IB=2mA
0.5
0.5
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
125℃
1000
Current Gain vs Collector Current
125℃
Current Gain---HFE
Current Gain---HFE
75℃
25℃
-25℃
75℃
25℃
-25℃
VCE=1V
VCE=2V
100
100
10
100
Collector Current---IC(mA)
1000
10
100
1000
Collector Current---IC(mA)
BTD1304N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Current Gain vs Collector Current
1000
125℃
1000
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 4/8
Current Gain vs Collector Current
125℃
Current Gain---HFE
75℃
25℃
-25℃
Current Gain---HFE
75℃
25℃
-25℃
VCE=3V
VCE=10V
100
100
10
100
Collector Current---IC(mA)
1000
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
VCESAT=10IB
Saturation Voltage vs Collector Current
1000
VCESAT=20IB
Saturation Voltage---(mV)
100
Saturation Voltage---(mV)
100
125°C
75°C
25°C
-25℃
10
10
125°C
75°C
25°C
-25℃
1
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
Saturation Voltage vs Collector Current
1000
VCESAT=25IB
10000
VBESAT=10IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
-25℃
75℃
1000
25℃
100
125°C
75°C
25°C
-25℃
10
1
10
100
Collector Current---IC(mA)
1000
125
100
1
10
100
1000
Collector Current---IC(mA)
BTD1304N3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
10000
VBESAT=20IB
Spec. No. : C857N3
Issued Date : 2011.03.31
Revised Date : 2011.04.01
Page No. : 5/8
On Voltage vs Collector Current
10000
VCE=2V
Saturation Voltage---(mV)
-25℃
25℃
1000
On Voltage---(mV)
-25℃
25℃
1000
75℃
125℃
100
1
10
100
1000
75℃
125℃
100
1
10
100
1000
Collector Current---IC(mA)
Collector Current---IC(mA)
Capacitance vs Reverse-biased Voltage
100
Cib
Capacitance---(pF)
10
Cob
1
0.1
1
10
100
Reverse-biased Voltage---VR(V)
BTD1304N3
CYStek Product Specification
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