CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :2013.08.12
Page No. : 1/6
BTD2098AM3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.35 V (typical), at I
C
/ I
B
= 3A / 0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTB1386AM3
•
Pb-free package
Symbol
BTD2098AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
40
30
6
5
8
0.6
1
2
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
*2
*3
Note : *1 Single pulse , Pw=10ms
*2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm.
*3 When mounted on a 40*40*0.7mm ceramic board.
BTD2098AM3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
*h
FE
*h
FE
f
T
Cob
Min.
40
30
6
-
-
-
250
270
150
-
-
Typ.
-
-
-
-
-
0.35
-
-
-
150
30
Max.
-
-
-
0.5
0.5
1.0
-
560
-
-
50
Unit
V
V
V
μA
μA
V
-
-
-
MHz
pF
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :2013.08.12
Page No. : 2/6
Test Conditions
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=3A, I
B
=0.1A
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=2A
V
CE
=6V, I
C
=50mA, f=100MHz
V
CB
=20V, I
E
=0A, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of h
FE
Rank
Range
S
270~560
Ordering Information
Device
BTD2098AM3
Package
SOT-89
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
AH
BTD2098AM3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :2013.08.12
Page No. : 3/6
Saturation Voltage vs Collector Current
1000
VCE(SAT)
Saturation Voltage---(mV)
IC=50IB
Current Gain---HFE
100
IC=40IB
VCE=2V
100
VCE=1V
10
IC=10IB
IC=30IB
10
1
10
100
1000
10000
Collector Current---IC(mA)
1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---(mV)
Power Dissipation---PD(W)
VBE(SAT) @ IC=10IB
Power Derating Curve
2.5
2
1.5
1
0.5
0
See Note 3 on page 1
See Note 2 on page 1
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---TA(℃)
200
BTD2098AM3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :2013.08.12
Page No. : 4/6
Carrier Tape Dimension
BTD2098AM3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :2013.08.12
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD2098AM3
CYStek Product Specification
京公网安备 11010802033920号
EEWORLD
