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Datasheet> All Categories > Discrete semiconductor> diode> 1N6629
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1N6629

Description
1.8 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size406KB，3 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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1N6629 Overview

1.8 A, SILICON, RECTIFIER DIODE

1N6629 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
package instructionO-XALF-W2
Reach Compliance Codeunknow
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JESD-30 codeO-XALF-W2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1.4 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage800 V
Maximum reverse current2 µA
Maximum reverse recovery time0.06 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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DIGITRON SEMICONDUCTORS
1N6626 – 1N6631
MAXIMUM RATINGS @ 25°C
Rating
Junction temperature
Storage temperature
Peak forward surge current @ 25°C
1N6626-1N6630
1N6631
Average rectified forward current @ T
L
= 75°C
(2)
1N6626-1N6628
1N6629-1N6631
Average rectified forward current at T
A
= 25°C
(3)
1N6626-1N6628
1N6629-1N6631
Thermal resistance L = 0.375”
Capacitance at V
R
= 10V
Solder temperature
1.75A
1.40A
22°C/W
40pF
260°C for 10 s maximum
2.3A
1.8A
(1)
ULTRA FAST RECTIFIERS
Value
-65° to 150°C
-65° to 175°C
75A
60A
Note 1: Test pulse = 8.3 ms, half-sine wave.
Note 2: Derate linearly at 1.0%/°C for T
L
> 75°.
Note 3: Derate linearly at 0.80%/°C for T
A
> 25°C. This is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where T
J(max)
is not
exceeded.
ELECTRICAL CHARACTERISTICS
Working
peak
reverse
voltage
Type
V
RWM
I
R
= 50μA
V
1N6626
1N6627
1N6628
1N6629
1N6630
1N6631
200
400
600
800
900
1000
V
220
440
660
880
990
1100
V@A
1.35V@2.0A
1.35V@2.0A
1.35V@2.0A
1.40V@1.4A
1.40V@1.4A
1.60V@1.4A
V
F
@ I
F
V@A
1.50V@4.0A
1.50V@4.0A
1.50V@4.0A
1.70V@3.0A
1.70V@3.0A
1.95V@2.0A
T
A
=25°C
μA
2.0
2.0
2.0
2.0
2.0
4.0
T
A
=150°C
μA
500
500
500
500
500
600
ns
30
30
30
50
50
60
ns
45
45
45
60
60
80
Minimum
breakdown
voltage
Maximum reverse
current
Max forward voltage
I
R @
V
RWM
Maximum
reverse
recovery
time (low
current)
Maximum
reverse
recovery
time (high
current)
Peak
Recovery
Current
I
RM (rec)
t
rr
Note 1
t
rr
Note 2
I
F
= 2A
100A/μS
Note 2
A
3.5
3.5
3.5
4.2
4.2
5.0
Forward
Recovery
Voltage
V
FRM
Max.
I
F
= 0.5A
t
r
= 12ns
V
8
8
8
12
12
20
V
R
Note 1: Low Current Reverse Recovery Time Test Conditions I
F
= 0.5A, I
RM
= 1.0A, I
R(REC)
= 0.25A.
Note 2: High Current Reverse Recovery Time Test Conditions I
F
= 2.0A, 100A/µs, MIL-STD-750, METHOD 4031, CONDITION D.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121120

1N6629 Related Products

1N6629 1N6626 1N6627 1N6628 1N6630
Description 1.8 A, SILICON, RECTIFIER DIODE 2.3 A, SILICON, RECTIFIER DIODE 1.75 A, SILICON, RECTIFIER DIODE 2.3 A, SILICON, RECTIFIER DIODE 1.8 A, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Digitron Digitron Digitron Digitron Digitron
Reach Compliance Code unknow unknow unknow unknow unknow
application ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY ULTRA FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.7 V 1.5 V 1.5 V 1.5 V 1.7 V
JESD-30 code O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
Maximum non-repetitive peak forward current 75 A 75 A 75 A 75 A 75 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 1.4 A 1.75 A 1.75 A 1.75 A 1.4 A
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 800 V 200 V 400 V 600 V 900 V
Maximum reverse current 2 µA 2 µA 2 µA 2 µA 2 µA
Maximum reverse recovery time 0.06 µs 0.045 µs 0.045 µs 0.045 µs 0.06 µs
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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