DIGITRON SEMICONDUCTORS
2N1770A-2N1777A, 2N2619A
PHASE CONTROL SCR
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Ratings
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Ratings
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Ratings
RMS on-state current
Average on-state current (nominal) T
C
= 105°C
Peak one-cycle surge (non-repetitive) on-state current (60 Hz)
I
2
t (for fusing), 8.3ms
Critical rate of rise of on-state current (repetitive)
Peak gate power dissipation
Average gate power dissipation
Peak forward gate current
Peak reverse gate voltage
Storage temperature
Operating temperature
Mounting torque
Mounting torque
Symbol
V
DRM
V
RRM
V
RSM
Symbol
V
DRM
V
RRM
V
RSM
2N1770A
25
25
35
2N1775A
250
250
350
2N1771A
50
50
75
2N1776A
300
300
400
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
stg
T
J
-
-
2N1772A
100
100
150
2N1773A
150
150
225
2N1777A
400
400
500
2N1774A
200
200
300
2N2619A
600
600
720
Units
Volts
Volts
Volts
Units
Volts
Volts
Volts
Units
Amps
Amps
Amps
A
2
sec
A/µs
Watts
Watts
Amps
Volts
°C
°C
In.- lbs.
kg-cm
2N1770A-2N1777A, 2N2619A
7.4
4.7
60
15
60
5
0.5
2
10
-65 to +150
-65 to +150
15
17.5
ELECTRICAL CHARACTERISTICS
Characteristics
Voltage-Blocking state maximum
Forward leakage, peak
Reverse leakage, peak
Characteristics
Voltage-Blocking state maximum
Forward leakage, peak
Reverse leakage, peak
Symbol
I
DRM
I
RRM
Symbol
I
DRM
I
RRM
Test Conditions
T
J
= 150°C, V
D
= V
DRM
T
J
= 150°C, V
R
= V
RRM
Test Conditions
T
J
= 150°C, V
D
=
V
DRM
T
J
= 150°C, V
R
=
V
RRM
2N1770A
9.0
9.0
2N1775A
5.0
5.0
2N1771A
9.0
9.0
2N1776A
4.0
4.0
2N1772A
9.0
9.0
2N1777A
2.0
2.0
2N1773A
8.0
8.0
2N2619A
2.0
2.0
2N1774A
6.0
6.0
Units
mA
mA
Units
mA
mA
Characteristics
Current- Conducting state
Holding current
Peak on state voltage
Switching
Typical critical dv/dt exponential to V
DRM
Thermal
Maximum thermal resistance,
Junction to case
Symbol
I
H
V
TM
dv/dt
Test Conditions
V
D
= 24V, R
L
= 20Ω, T
J
= 25°C
T
C
= 25°C, I
TM
= 15A
-
2N1770A-2N1777A, 2N2619A
Min
-
-
-
Typ
-
-
20
Max
25
1.85
-
Units
mA
Volts
V/µs
R
th(j-c)
-
-
-
3.1
°C/Watt
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
Microcontroller MCU
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