SE34G-C datasheet, PDF - EEWORLD Datasheet

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SE34G-C: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,; CategoryDiscrete semiconductor diode; File Size397KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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SE34G-C Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,

SE34G-C Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	O-PALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V
JEDEC-95 code	DO-27
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	125 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.025 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

SE34G-C Preview

SE33G~SE35G

Elektronische Bauelemente

Voltage 200V ~ 600V

3.0 Amp Super Fast Recovery Rectifier

RoHS Compliant Product

A suffix of “-C” specifies and halogen free

FEATURES



DO-27

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

C

A

B

MECHANICAL DATA



Case：Molded plastic DO-27

Epoxy：UL 94V-0 rate flame retardant

Terminals：Solderable per MIL-STD-202

method 208

Polarity：Color band denotes cathode

Mounting position：Any

Weight：1.1 grams

D

A

REF.

A

B

C

D

Millimeter

Min.

Max.

25.4 (TYP)

7.20

9.50

4.80

5.60

1.10

1.30

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current T

L

=55°C

Peak Forward Surge Current,8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)

Maximum Instantaneous Forward Voltage @ 3.0A

Maximum DC Reverse Current At

Rated DC Blocking Voltage

Maximum Reverse Recovery Time

1

Typical Junction Capacitance

Typical Thermal Resistance

3

Operating Junction and Storage Temperature Range

2

Symbol

SE33G

V

RRM

V

RMS

V

DC

I

F(AV)

I

FSM

V

F

I

R

T

RR

C

J

R

θJC

T

J

, T

STG

20

0.92

200

140

200

Part Number

SE34G

400

280

400

3.0

125

1.25

5.0

150

25

60

50

-55~150

1.7

Unit

SE35G

600

480

600

V

A

V

μA

nS

pF

°C W

°C

T

J

=25°C

T

J

=125°C

Notes：

1. Reverse recovery test conditions I

F

= 0.5A, I

R

= 1.0A, I

RR

= 0.25A.

2. Thermal Resistance junction to lead.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2013 Rev. B

Page 1 of 2

SE33G~SE35G

Elektronische Bauelemente

Voltage 200V ~ 600V

3.0 Amp Super Fast Recovery Rectifier

RATINGS AND CHARACTERISTICS CURVE

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2013 Rev. B

Page 2 of 2

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

SE34G-C Related Products

	SE34G-C	SE34G	SE33G-C	SE35G	SE35G-C
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,
Maker	SECOS	SECOS	SECOS	SECOS	SECOS
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.25 V	1.25 V	0.92 V	1.7 V	1.7 V
JEDEC-95 code	DO-27	DO-27	DO-27	DO-27	DO-27
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	125 A	125 A	125 A	125 A	125 A
Number of components	1	1	1	1	1
Phase	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	400 V	400 V	200 V	600 V	600 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.025 µs	0.025 µs	0.02 µs	0.025 µs	0.025 µs
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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