DIGITRON SEMICONDUCTORS
2N6400-2N6405
SILICON CONTROLLED RECTIFIERS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(1)
(T
J
= -40 to 125°C, sine wave 50 to 60Hz, gate open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
On-state RMS current
(180° conduction angles), T
C
= 100°C)
Average on-state current
(180° conduction angles, T
C
= 100°C)
Peak non-repetitive surge current
(1/2 cycle, sine wave 60Hz, T
J
= 90°C)
Circuit fusing
(t = 8.3ms)
Forward peak gate power
(pulse width
≤
1.0µs, T
C
= 100°C)
Forward average gate power
(t = 8.3ms, T
C
= 100°C)
Forward peak gate current
(Pulse width
≤
1.0µs, T
C
= 100°C)
Operating junction temperature range
Storage temperature range
1.
Symbol
Value
Unit
V
DRM
V
RRM
50
100
200
400
600
800
16
10
160
145
20
0.5
2.0
-40 to 125
-40 to 150
Volts
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
Amps
A
2
s
Watts
Watts
Amps
°C
°C
V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds
Symbol
R
ӨJC
T
L
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking current
(V
AK
= rated V
DRM
or V
RRM
, gate open)
ON CHARACTERISTICS
Peak forward on-state voltage
(I
TM
= 32A peak, pulse width
≤
1ms, duty cycle
≤
2%)
Gate trigger current (continuous dc)
(V
D
= 12Vdc, R
L
= 100ohms)
Gate trigger voltage (continuous dc)
(V
D
= 12Vdc, R
L
= 100ohms)
Gate non-trigger voltage
(V
D
= 12Vdc, R
L
= 100ohms)
144 Market Street
Kenilworth NJ 07033 USA
Symbol
Min
Typ
Max
Unit
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
-
-
-
-
10
2.0
µA
mA
V
TM
-
-
-
-
-
0.2
-
9.0
-
0.7
-
-
1.7
30
60
1.5
2.5
-
Volts
T
C
= 25°C
T
C
= -40°C
T
C
= 25°C
T
C
= -40°C
T
C
= 125°C
phone +1.908.245-7200
fax +1.908.245-0555
I
GT
mA
V
GT
Volts
V
GD
Volts
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120924
DIGITRON SEMICONDUCTORS
2N6400-2N6405
ON CHARACTERISTICS
Holding current
(V
D
= 12Vdc, initiating current = 200mA, gate open)
Turn-on time
(I
TM
= 16A, I
GT
= 40mAdc, V
D
= rated V
DRM
)
Turn-off time
(I
TM
= 16A, I
R
= 16A, V
D
= rated V
DRM
)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off state voltage
(V
D
= rated V
DRM
, exponential waveform)
T
J
= 125°C
dv/dt
-
50
-
V/µs
T
C
= 25°C
T
J
= 125°C
T
C
= 25°C
T
C
= -40°C
I
H
-
-
-
-
-
18
-
1.0
15
35
40
60
-
-
-
mA
SILICON CONTROLLED RECTIFIERS
t
gt
µs
t
q
µs
MECHANICAL CHARACTERISTICS
Case
Marking
Pin out
TO-220AB
Alpha-numeric
See below
TO-220AB
Inches
Min
Max
0.575 0.620
0.380 0.405
0.160 0.190
0.025 0.035
0.142 0.147
0.095 0.105
0.110 0.155
0.014 0.022
0.500 0.562
0.045 0.055
0.190 0.210
0.100 0.120
0.080 0.110
0.045 0.055
0.235 0.255
-
0.050
0.045
-
-
0.080
Millimeters
Min
Max
14.600 15.750
9.650 10.290
4.060
4.820
0.640
0.890
3.610
3.730
2.410
2.670
2.790
3.930
0.360
0.560
12.700 14.270
1.140
1.390
4.830
5.330
2.540
3.040
2.040
2.790
1.140
1.390
5.970
6.480
-
1.270
1.140
-
-
2.030
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20120924
Talking
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