BYV95D datasheet, PDF - EEWORLD Datasheet

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BYV95D: DescriptionRectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AP,; CategoryDiscrete semiconductor diode; File Size22KB，2 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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BYV95D Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AP,

BYV95D Parametric

Parameter Name	Attribute value
Maker	Vishay
Parts packaging code	DO-204
package instruction	E-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-204AP
JESD-30 code	E-LALF-W2
Maximum non-repetitive peak forward current	35 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	1.5 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	800 V
Maximum reverse recovery time	0.5 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

BYV95D Preview

BYV95 and BYV96 Series

Vishay Semiconductors

formerly General Semiconductor

Miniature Glass Passivated

Fast Switching Rectifier

DO204AP

0.034 (0.86)

0.028 (0.71)

DIA.

1.0 (25.4)

MIN.

Features

Reverse Voltage

200 to 1000 V

Forward Current

1.5 A

nte

ate

0.150 (3.8)

0.100 (2.5)

DIA.

0.240 (6.1)

MAX.

• High temperature metallurgically bonded construction

• Hermetically sealed package

• Cavity-free glass passivated junction

• 1.5 Ampere operation at T

=55°C with no thermal runaway

• Typical I

less than 0.1µA

• Capable of meeting environmental standards of

MIL-S-19500

• Fast switching for high efficiency

• High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3kg) tension

Mechanical Data

1.0 (25.4)

MIN.

Brazed-lead assembly is covered by Patent No. 3,930,306

Parameter

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375” (9.5mm) lead length at T

=55°C

Peak forward surge current, 10ms single half sine-

wave superimposed on rated load at T

=165°C

Maximum full load reverse current,

full cycle average, 0.375”, (9.5mm)

lead length at

Typical thermal resistance

(1)

Dimensions in inches and (millimeters)

Case:

JEDEC DO-204AP Solid glass body

Terminals:

Solder plated axial leads, solderable per MIL-

STD-750, Method 2026

Polarity:

Color band denotes cathode end

Mounting Position:

Any

Weight:

0.02 ounce, 0.56 gram

Maximum Ratings & Thermal Characteristics

Ratings at 25°C ambient temperature unless otherwise specified.

Symbols BYV95A

RRM

RMS

F(AV)

FSM

R(AV)

ΘJA

STG

200

140

200

BYV95B

400

280

400

BYV95C

600

420

600

1.5

1.0

150

-65 to +175

-65 to +200

BYV96D

800

560

800

BYV96E

1000

700

1000

Units

µA

°C/W

°C

=25°C

=165°C

Operating junction temperature range

Storage temperature range

Electrical Characteristics

Maximum instantaneous forward

voltage at 1.5A

Maximum DC reverse current

at rated DC blocking voltage

Maximum reverse recovery time at

=0.5A, I

=1.0A, I

=0.25A

Typical junction capacitance at 4.0V, 1MHz

Ratings at 25°C ambient temperature unless otherwise specified.

Minimum avalanche breakdown voltage at 100µA

=25°C

=165°C

(BR)

300

500

700

1.6

1.35

2.0

900

1100

µA

250

300

Notes:

(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

Document Number 88559

14-Mar-02

www.vishay.com

BYV95 and BYV96 Series

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves

= 25°C unless otherwise noted)

Fig. 1 – Forward Current

Derating Curve

Average Forward Rectified Current (A)

2.0

Fig. 2 – Maximum Non-Repetitive

Peak Forward Surge Current

Peak Forward Surge Current (A)

= 165°C

10ms Single Half Sine-Wave

(JEDEC Method)

Resistive or

Inductive Load

1.5

1.0

0.5

0.375" (9.5mm) Lead Length

100

125

150

175

100

Ambient Temperature (°C)

Number of Cycles at 50 H

Fig. 3 – Typical Instantaneous

Forward Characteristics

Fig. 4 – Typical Reverse

Characteristics

Instantaneous Reverse Current (µA)

= 125°C

Instantaneous Forward Current (A)

= 100°C

= 25°C

Pulse Width = 300µs

1% Duty Cycle

0.1

= 75°C

0.1

= 25°C

0.01

100

0.01

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Instantaneous Forward Voltage (V)

Percent of Rated Peak Reverse Voltage (%)

Fig. 5 – Typical Junction

Capacitance

= 25°C

f = 1.0MH

Vsig = 50mVp-p

Junction Capacitance (pF)

Reverse Voltage (V)

100

www.vishay.com

Document Number 88559

14-Mar-02

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BYV95D Related Products

	BYV95D	BYV95E
Description	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AP,	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-204AP
Maker	Vishay	Vishay
package instruction	E-LALF-W2	E-LALF-W2
Reach Compliance Code	unknown	unknown
application	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-204AP	DO-204AP
JESD-30 code	E-LALF-W2	E-LALF-W2
Maximum non-repetitive peak forward current	35 A	35 A
Number of components	1	1
Phase	1	1
Number of terminals	2	2
Maximum output current	1.5 A	1.5 A
Package body material	GLASS	GLASS
Package shape	ELLIPTICAL	ELLIPTICAL
Package form	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	800 V	1000 V
Maximum reverse recovery time	0.5 µs	0.5 µs
surface mount	NO	NO
Terminal form	WIRE	WIRE
Terminal location	AXIAL	AXIAL

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