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P6SMB150CATR13

Description
Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Bidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size68KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

P6SMB150CATR13 Overview

Trans Voltage Suppressor Diode, 600W, 128V V(RWM), Bidirectional, 1 Element, Silicon,

P6SMB150CATR13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage157.5 V
Minimum breakdown voltage142.5 V
Breakdown voltage nominal value150 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage128 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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