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SUB70N03-09

Description
TRANSISTOR 70 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 2 PIN, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size131KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SUB70N03-09 Overview

TRANSISTOR 70 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 2 PIN, FET General Purpose Power

SUB70N03-09 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)70 A
Maximum drain-source on-resistance0.009 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
SUP/SUB70N03-09P
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V
(BR)DSS
(V)
30
r
DS(on)
(W)
0.009 @ V
GS
= 10 V
0.015 @ V
GS
= 4.5 V
I
D
(A)
"70
a
"55
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP70N03-09
SUB70N03-09
N-Channel MOSFET
D S
Top View
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"
30
"20
"70
a
"50
"180
"45
101
93
c
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70821
S-59917—Rev. A, 28-Sep-98
www.vishay.com
S
FaxBack 408-970-5600
R
thJC
R
thJA
62.5
1.6
Symbol
Limit
40
Unit
_C/W
2-1

SUB70N03-09 Related Products

SUB70N03-09 SUP70N03-09
Description TRANSISTOR 70 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 2 PIN, FET General Purpose Power TRANSISTOR 70 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Parts packaging code D2PAK TO-220AB
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Contacts 4 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 70 A 70 A
Maximum drain-source on-resistance 0.009 Ω 0.009 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-220AB
JESD-30 code R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 180 A 180 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface TIN LEAD TIN LEAD
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
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