TLP291-4
Photocouplers
GaAs Infrared LED & Photo Transistor
TLP291-4
1. Applications
•
•
•
Programmable Logic Controllers (PLCs)
Switching Power Supplies
Simplex/Multiplex Data Transmission
2. General
The Toshiba TLP291-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.
The TLP291-4 Photocoupler is housed in the very small and thin SO16 package.
Since the TLP291-4 is guaranteed over a wide operating temperature range (T
a
= -55 to 110), it is suitable for
high-density surface mount applications such as programmable controllers.
3. Features
(1)
(2)
(3)
(4)
(5)
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
GB Rank: 100% (min)
Isolation voltage: 2500 Vrms (min)
Operating temperature: -55 to 110
Safety standards
UL-approved UL1577 File No.E67349
cUL-approved CSA Component Acceptance Service No.5A File No.E67349
VDE approved EN60747-5-5 Certificate No. 40009347 (Note)
Note: When an EN60747-5-5 approved type is needed, please designate the Option (V4)
(V4).
4. Packaging and Pin Configuration
1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
10, 12, 14, 16: Collector
11-11F1
Start of commercial production
1
2012-03
2014-04-12
Rev.5.0
TLP291-4
5. Principle of Operation
5.1. Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
5.0
5.0
0.1
Unit
mm
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
25
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Junction temperature
Detector Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation
derating (1 circuit)
Junction temperature
Common Operating temperature
Storage temperature
Lead soldering temperature
Total power dissipation
(1 circuit)
Input power dissipation
derating(1 circuit)
Isolation voltage
(T
a
≥
25)
AC, 60 s, R.H.
≤
60%
(10 s)
(T
a
≥
25)
(T
a
≥
50)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/∆T
a
T
j
T
opr
T
stg
T
sol
P
T
∆P
D
/∆T
a
BV
S
(Note 2)
(Note 1)
Note
Rating
50
-0.67
1
5
125
80
7
50
100
-1.0
125
-55 to 110
-55 to 125
260
170
-1.7
2500
mW
mW/
Vrms
mA
mW
mW/
Unit
mA
mA/
A
V
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
100
µs,
f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1, 2, 3, 4, 5, 6, 7 and 8 are shorted together, and pins
9, 10, 11, 12, 13, 14, 15 and 16 are shorted together.
Note:
2
2014-04-12
Rev.5.0
TLP291-4
7. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
25
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Dark Current
Collector-emitter capacitance
Symbol
V
F
I
R
C
t
V
(BR)CEO
V
(BR)ECO
I
DARK
C
CE
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, T
a
= 85
V = 0 V, f = 1 MHz
Min
1.1
80
7
Typ.
1.20
30
0.01
2
10
Max
1.4
10
0.1
50
pF
µA
Unit
V
µA
pF
V
8. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
25
Characteristics
Current transfer ratio
Saturated current transfer ratio
Collector-emitter saturation
voltage
Symbol
I
C
/I
F
I
C
/I
F(sat)
V
CE(sat)
Note
Test Condition
Min
50
100
30
Typ.
60
0.2
Max
400
400
0.4
0.4
10
µA
V
Unit
%
(Note 1) I
F
= 5 mA, V
CE
= 5 V
I
F
= 5 mA, V
CE
= 5 V, Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
I
F
= 1 mA, V
CE
= 0.4 V, Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
I
C
= 0.2 mA, I
F
= 1 mA
I
C
= 0.2 mA, I
F
= 1 mA, Rank GB
OFF-state collector current
I
C(off)
V
F
= 0.7 V, V
CE
= 48 V
Note 1: See Table 8.1 for current transfer ratio.
25
Table 8.1 Current transfer ratio (CTR) Rank (Note) (Unless otherwise specified, T
a
= 25
)
Rank
Test Condition
Current
transfer
ratio I
C
/I
F
Min
50
100
Current
transfer
ratio I
C
/I
F
Max
400
400
Marking of
Classification
Blank
GB
Unit
Blank
GB
I
F
= 5 mA, V
CE
= 5 V
%
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP291-4 (GB)
For safety standard certification, however, specify the part number alone.
Example: TLP291-4 (GB,E: TLP291-4
9. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
25
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Conditions
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
(Note1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Min
1
×
10
12
2500
Typ.
0.8
10
14
5000
5000
Max
Vdc
Unit
pF
Ω
Vrms
Note1: This device is considered as a two-terminal device: Pins 1, 2, 3, 4, 5, 6, 7 and 8 are shorted together, and pins
9, 10, 11, 12, 13, 14, 15 and 16 are shorted together.
3
2014-04-12
Rev.5.0
TLP291-4
10. Switching Characteristics (Unless otherwise specified, T
a
= 25
)
25
Characteristics
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
See Figure 10.1
R
L
= 1.9 kΩ, V
CC
= 5 V,
I
F
= 16 mA
Note
Test Condition
V
CC
= 10 V, I
C
= 2 mA,
R
L
= 100
Ω
Min
Typ.
2
3
3
3
2
25
60
Max
Unit
µs
Fig. 10.1 Switching Time Test Circuit
4
2014-04-12
Rev.5.0
TLP291-4
11. Characteristics Curves (Note)
Fig. 11.1 I
F
- T
a
Fig. 11.2 P
C
- T
a
Fig. 11.3 I
FP
- D
R
Fig. 11.4 I
F
- V
F
Fig. 11.5
∆
V
F
/
∆
T
a
- I
F
Fig. 11.6 I
FP
- V
FP
5
2014-04-12
Rev.5.0
京公网安备 11010802033920号
EEWORLD
