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1N4006GPL-AP-HF

Description
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
CategoryDiscrete semiconductor    diode   
File Size214KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

1N4006GPL-AP-HF Overview

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,

1N4006GPL-AP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time2 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
MCC
Micro Commercial Components
R
  omponents
20736 Marilla
Street Chatsworth

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1N4001GPL
THRU
1N4007GPL
1 Amp Glass
Passivated Rectifier
50 - 1000 Volts
DO-41
Features
Halogen
free available upon request by adding suffix "-HF"
Glass Passivated Junction
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 20
°C/W
Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
I
F(AV)
I
FSM
1.0A
30A
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
T
A
= 75°C
8.3ms, half sine
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
D
1N4001GPL
1N4002GPL
1N4003GPL
1N4004GPL
1N4005GPL
1N4006GPL
1N4007GPL
1N4001GL
1N4002GL
1N4003GL
1N4004GL
1N4005GL
1N4006GL
1N4007GL
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Typical
Reverse
Recovery Time
Note:
C
V
F
1.1V
I
FM
= 1.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 125°C
Measured at
1.0MHz, V
R
=4.0V
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
DIM
A
B
C
D
INCHES
MIN
.166
.080
.028
1.000
DIMENSIONS
MM
MIN
4.10
2.00
.70
25.40
I
R
5.0µA
50µA
15pF
2.0us
C
J
T
rr
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
1.
High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Revision:
B
www.mccsemi.com
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