DIGITRON SEMICONDUCTORS
MCR264-4 – MCR264-12
SILICON CONTROLLED RECTIFIERS
THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage
(T
J
= 25 to 125°C, Gate Open)
(1)
Symbol
MCR264-4
MCR264-6
MCR264-8
MCR264-10
MCR264-12
Value
200
400
600
800
1000
40
25
400
450
20
0.5
2
-40 to +125
-40 to +150
Unit
V
DRM
V
RRM
Volts
Forward Current
(T
C
= 80°C)
(All Conduction Angles)
Peak Non-Repetitive Surge Current – 8.3ms
(1/2 Cycle, Sine Wave)
1.5ms
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300µs, 120PPS)
Operating Junction Temperature Range
Storage Temperature Range
1.
I
T(RMS)
I
T(AV)
I
TSM
P
GM
P
G(AV)
I
GM
T
J
T
stg
Amps
Amps
Watts
Watt
Amps
°C
°C
V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage
shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to ensure proper heat sinking when the
device is to be used at high sustained currents.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R
θJC
R
θJA
Max
1
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.
Characteristics
Peak Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
Forward “On” Voltage
(I
TM
= 80A)
(1)
Symbol
T
J
= 25°C
T
J
= 125°C
I
DRM
, I
RRM
V
TM
I
GT
V
GT
V
GD
I
H
t
gt
dv/dt
Min
-
-
-
-
-
-
0.2
-
-
-
Typ
-
-
1.4
15
30
1
-
30
1.5
50
Max
10
2
2
50
90
1.5
-
60
-
-
Unit
µA
mA
Volts
mA
Volts
Volts
mA
µs
V/µs
Gate Trigger Current
(Continuous dc)
(Anode Voltage = 12 Vdc, R
L
= 100 Ohms, T
C
= -40°C)
Gate Trigger Voltage
(Continuous dc)
(Anode Voltage = 12 Vdc, R
L
= 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated V
DRM
, R
L
= 100 Ohms, T
J
= 125°C)
Holding Current
(Anode Voltage = 12 Vdc)
Turn-On Time
(I
TM
= 40 A, I
GT
= 60 mAdc)
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, V
D
= Rated V
DRM
, Exponential Waveform)
1.
Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130108
Industrial Control Electronics
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