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MR1120

Description
12 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
CategoryDiscrete semiconductor    diode   
File Size151KB,3 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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MR1120 Overview

12 A, 50 V, SILICON, RECTIFIER DIODE, DO-4

MR1120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
Minimum breakdown voltage50 V
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Minimum operating temperature-65 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage50 V
Maximum reverse current500 µA
Reverse test voltage50 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationUPPER
DIGITRON SEMICONDUCTORS
MR1120-MR1126, MR1128, MR1130
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Non-repetitive peak reverse voltage
(½ wave, single phase, 60 cycle peak)
RMS reverse voltage
Average rectified forward current
(Rated V
R
)
Peak repetitive forward current
Non-repetitive peak surge current
(superimposed on rated current at rated voltage, T
C
= 150°C)
I
2
t rating
(non repetitive, 1ms < t < 8.3ms)
Operating and storage junction temperature range
Maximum thermal resistance
Junction to case
Symbol
1120
1121
1122
1123
12A STANDARD RECOVERY RECTIFIER
MR
1124
1125
1126
1128
1130
Unit
V
RRM
V
RWM
V
R
V
RSM
V
R(RMS)
I
O
I
FRM
I
FSM
I
2
t
T
J,
T
stg
R
ӨJC
50
100
200
300
400
500
600
800
1000
V
100
200
300
400
500
600
720
1000
1200
V
V
A
A
A
A
(rms)2
S
35
70
140
210
280
350
420
560
700
12 @ T
C
= 150°C
75 @ T
C
= 150°C
300 for ½ cycle
375
-65 to +190
2.5
°C
°C/W
ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless otherwise noted)
Parameter
Full cycle average forward voltage drop
(I
O
= 12A and rated V
R
, T
C
= 150°C, half wave)
DC forward voltage drop
(I
F
= 12Adc, T
C
= 25°C)
Full cycle average reverse current
(I
O
= 12A and rated V
R
, T
C
= 150°C, half wave)
DC reverse current
(Rated V
R
, T
C
= 25°C)
Note 1: Pulse test: Pulse width = 300µs, duty cycle = 2.0%.
Symbol
V
F(AV)
V
F
I
R(AV)
I
R
MR
1120
1121
1122
1123
1124
1125
1126
1128
1130
Unit
V
V
mA
mA
0.55
1.0
1.5
0.5
MECHANICAL CHARACTERISTICS
Case
Marking
Normal polarity
Reverse polarity
DO-4(R)
Alpha-numeric
Cathode is stud
Anode is stud (add “R” suffix)
DO-4(R)
Inches
Min
Max
-
0.078
0.422 0.453
-
0.405
-
0.800
0.420 0.440
-
0.250
-
0.424
0.066
-
Millimeters
Min
Max
-
1.981
10.719 11.506
-
10.287
-
20.320
10.668 11.176
-
6.350
-
10.770
1.676
-
A
B
C
D
E
F
G
H
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121128

MR1120 Related Products

MR1120 MR1121 MR1122 MR1123 MR1124 MR1125 MR1126 MR1128 MR1130
Description 12 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 300 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 400 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 500 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow unknow
Minimum breakdown voltage 50 V 100 V 200 V 300 V 400 V 500 V 600 V 800 V 1000 V
Shell connection CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V 1 V 1 V
JEDEC-95 code DO-4 DO-4 DO-4 DO-4 DO-4 DO-4 DO-4 DO-4 DO-4
JESD-30 code O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1 O-MUPM-D1
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A 300 A
Number of components 1 1 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1 1 1
Number of terminals 1 1 1 1 1 1 1 1 1
Maximum operating temperature 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C 190 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 12 A 12 A 12 A 12 A 12 A 12 A 12 A 12 A 12 A
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Maximum repetitive peak reverse voltage 50 V 100 V 200 V 300 V 400 V 500 V 600 V 800 V 1000 V
Maximum reverse current 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA 500 µA
Reverse test voltage 50 V 100 V 200 V 300 V 400 V 500 V 600 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Maker Digitron Digitron Digitron Digitron - Digitron Digitron Digitron Digitron

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