MR1125 datasheet, PDF - EEWORLD Datasheet

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MR1125: Description12 A, 500 V, SILICON, RECTIFIER DIODE, DO-4; CategoryDiscrete semiconductor diode; File Size151KB，3 Pages; ManufacturerDigitron; Websitehttp://www.digitroncorp.com

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MR1125 Overview

12 A, 500 V, SILICON, RECTIFIER DIODE, DO-4

MR1125 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Digitron
package instruction	O-MUPM-D1
Reach Compliance Code	unknow
Minimum breakdown voltage	500 V
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JEDEC-95 code	DO-4
JESD-30 code	O-MUPM-D1
JESD-609 code	e0
Maximum non-repetitive peak forward current	300 A
Number of components	1
Phase	1
Number of terminals	1
Maximum operating temperature	190 °C
Minimum operating temperature	-65 °C
Maximum output current	12 A
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	500 V
Maximum reverse current	500 µA
Reverse test voltage	500 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	SOLDER LUG
Terminal location	UPPER

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DIGITRON SEMICONDUCTORS

MR1120-MR1126, MR1128, MR1130

MAXIMUM RATINGS

Rating

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

Non-repetitive peak reverse voltage

(½ wave, single phase, 60 cycle peak)

RMS reverse voltage

Average rectified forward current

(Rated V

)

Peak repetitive forward current

Non-repetitive peak surge current

(superimposed on rated current at rated voltage, T

= 150°C)

t rating

(non repetitive, 1ms < t < 8.3ms)

Operating and storage junction temperature range

Maximum thermal resistance

Junction to case

Symbol

1120

1121

1122

1123

12A STANDARD RECOVERY RECTIFIER

1124

1125

1126

1128

1130

Unit

RRM

RWM

RSM

R(RMS)

FRM

FSM

stg

ӨJC

100

200

300

400

500

600

800

1000

100

200

300

400

500

600

720

1000

1200

(rms)2

140

210

280

350

420

560

700

12 @ T

= 150°C

75 @ T

= 150°C

300 for ½ cycle

375

-65 to +190

2.5

°C

°C/W

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Parameter

Full cycle average forward voltage drop

= 12A and rated V

, T

= 150°C, half wave)

DC forward voltage drop

= 12Adc, T

= 25°C)

Full cycle average reverse current

= 12A and rated V

, T

= 150°C, half wave)

DC reverse current

(Rated V

, T

= 25°C)

Note 1: Pulse test: Pulse width = 300µs, duty cycle = 2.0%.

Symbol

F(AV)

R(AV)

1120

1121

1122

1123

1124

1125

1126

1128

1130

Unit

0.55

1.0

1.5

0.5

MECHANICAL CHARACTERISTICS

Case

Marking

Normal polarity

Reverse polarity

DO-4(R)

Alpha-numeric

Cathode is stud

Anode is stud (add “R” suffix)

DO-4(R)

Inches

Min

Max

0.078

0.422 0.453

0.405

0.800

0.420 0.440

0.250

0.424

0.066

Millimeters

Min

Max

1.981

10.719 11.506

10.287

20.320

10.668 11.176

6.350

10.770

1.676

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20121128

MR1125 Related Products

	MR1125	MR1120	MR1121	MR1122	MR1123	MR1124	MR1126	MR1128	MR1130
Description	12 A, 500 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 50 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 100 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 300 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 400 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 600 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4	12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Minimum breakdown voltage	500 V	50 V	100 V	200 V	300 V	400 V	600 V	800 V	1000 V
Shell connection	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE	CATHODE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V	1 V	1 V	1 V	1 V
JEDEC-95 code	DO-4	DO-4	DO-4	DO-4	DO-4	DO-4	DO-4	DO-4	DO-4
JESD-30 code	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1	O-MUPM-D1
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	300 A	300 A	300 A	300 A	300 A	300 A	300 A	300 A	300 A
Number of components	1	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1	1
Number of terminals	1	1	1	1	1	1	1	1	1
Maximum operating temperature	190 °C	190 °C	190 °C	190 °C	190 °C	190 °C	190 °C	190 °C	190 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	12 A	12 A	12 A	12 A	12 A	12 A	12 A	12 A	12 A
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Maximum repetitive peak reverse voltage	500 V	50 V	100 V	200 V	300 V	400 V	600 V	800 V	1000 V
Maximum reverse current	500 µA	500 µA	500 µA	500 µA	500 µA	500 µA	500 µA	500 µA	500 µA
Reverse test voltage	500 V	50 V	100 V	200 V	300 V	400 V	600 V	800 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG	SOLDER LUG
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
Maker	Digitron	Digitron	Digitron	Digitron	Digitron	-	Digitron	Digitron	Digitron

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