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KM416C1204BJ-L6

Description
EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
Categorystorage    storage   
File Size273KB,8 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM416C1204BJ-L6 Overview

EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

KM416C1204BJ-L6 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ, SOJ42,.44
Contacts42
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J42
JESD-609 codee0
length27.31 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals42
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ42,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height3.76 mm
self refreshYES
Maximum standby current0.0002 A
Maximum slew rate0.15 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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