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K4S641632H-TL70

Description
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
Categorystorage    storage   
File Size144KB,14 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4S641632H-TL70 Overview

64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free

K4S641632H-TL70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2, TSOP54,.46,32
Contacts54
Reach Compliance Codecompli
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)143 MHz
I/O typeCOMMON
interleaved burst length1,2,4,8
JESD-30 codeR-PDSO-G54
JESD-609 codee0
length22.22 mm
memory density67108864 bi
Memory IC TypeSYNCHRONOUS DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals54
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP54,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum seat height1.2 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.001 A
Maximum slew rate0.14 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
SDRAM 64Mb H-die (x4, x8, x16)
CMOS SDRAM
64Mb H-die SDRAM Specification
Revision 1.8
August 2004
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 1.8 August 2004

K4S641632H-TL70 Related Products

K4S641632H-TL70 K4S641632H-TL60 K4S640432H-TC
Description 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free
Is it Rohs certified? incompatible incompatible -
Maker SAMSUNG SAMSUNG -
Parts packaging code TSOP2 TSOP2 -
package instruction TSOP2, TSOP54,.46,32 TSOP2, TSOP54,.46,32 -
Contacts 54 54 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST -
Maximum access time 6 ns 5 ns -
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH -
Maximum clock frequency (fCLK) 143 MHz 166 MHz -
I/O type COMMON COMMON -
interleaved burst length 1,2,4,8 1,2,4,8 -
JESD-30 code R-PDSO-G54 R-PDSO-G54 -
JESD-609 code e0 e0 -
length 22.22 mm 22.22 mm -
memory density 67108864 bi 67108864 bi -
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM -
memory width 16 16 -
Number of functions 1 1 -
Number of ports 1 1 -
Number of terminals 54 54 -
word count 4194304 words 4194304 words -
character code 4000000 4000000 -
Operating mode SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 70 °C 70 °C -
organize 4MX16 4MX16 -
Output characteristics 3-STATE 3-STATE -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code TSOP2 TSOP2 -
Encapsulate equivalent code TSOP54,.46,32 TSOP54,.46,32 -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
power supply 3.3 V 3.3 V -
Certification status Not Qualified Not Qualified -
refresh cycle 4096 4096 -
Maximum seat height 1.2 mm 1.2 mm -
self refresh YES YES -
Continuous burst length 1,2,4,8,FP 1,2,4,8,FP -
Maximum standby current 0.001 A 0.001 A -
Maximum slew rate 0.14 mA 0.16 mA -
Maximum supply voltage (Vsup) 3.6 V 3.6 V -
Minimum supply voltage (Vsup) 3 V 3 V -
Nominal supply voltage (Vsup) 3.3 V 3.3 V -
surface mount YES YES -
technology CMOS CMOS -
Temperature level COMMERCIAL COMMERCIAL -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Terminal form GULL WING GULL WING -
Terminal pitch 0.8 mm 0.8 mm -
Terminal location DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
width 10.16 mm 10.16 mm -
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