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CY7C1522KV18-200BZXC

Description
DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Categorystorage    storage   
File Size883KB,32 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CY7C1522KV18-200BZXC Overview

DDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

CY7C1522KV18-200BZXC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
Parts packaging codeBGA
package instruction15 X 13 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)200 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
length15 mm
memory density67108864 bit
Memory IC TypeDDR SRAM
memory width8
Number of functions1
Number of terminals165
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Minimum standby current1.7 V
Maximum slew rate0.37 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
CY7C1522KV18, CY7C1529KV18
CY7C1523KV18, CY7C1524KV18
72-Mbit DDR II SIO SRAM 2-Word
Burst Architecture
Features
Functional Description
The CY7C1522KV18, CY7C1529KV18, CY7C1523KV18, and
CY7C1524KV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with DDR II SIO (Double Data Rate Separate I/O)
architecture. The DDR II SIO consists of two separate ports: the
read port and the write port to access the memory array. The
read port has data outputs to support read operations and the
write port has data inputs to support write operations. The DDR
II SIO has separate data inputs and data outputs to completely
eliminate the need to “turnaround” the data bus required with
common I/O devices. Access to each port is accomplished
through a common address bus. Addresses for read and write
are latched on alternate rising edges of the input (K) clock. Write
data is registered on the rising edges of both K and K. Read data
is driven on the rising edges of C and C if provided, or on the
rising edge of K and K if C/C are not provided. Each address
location is associated with two 8-bit words in the case of
CY7C1522KV18, two 9-bit words in the case of
CY7C1529KV18, two 18-bit words in the case of
CY7C1523KV18, and two 36-bit words in the case of
CY7C1524KV18 that burst sequentially into or out of the device.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs are tightly matched to the
two output echo clocks CQ/CQ, eliminating the need to capture
data separately from each individual DDR II SIO SRAM in the
system design. Output data clocks (C/C) enable maximum
system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
72 Mbit Density (8M x 8, 8M x 9, 4M x 18, 2M x 36)
333 MHz Clock for High Bandwidth
2-word Burst for reducing Address Bus Frequency
Double Data Rate (DDR) Interfaces
(data transferred at 666 MHz) at 333 MHz
Two Input Clocks (K and K) for precise DDR Timing
SRAM uses rising edges only
Two Input Clocks for Output Data (C and C) to minimize Clock
Skew and Flight Time mismatches
Echo Clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Synchronous Internally Self timed Writes
DDR II operates with 1.5 Cycle Read Latency when DOFF is
asserted HIGH
Operates similar to DDR-I Device with 1 Cycle Read Latency
when DOFF is asserted LOW
1.8V Core Power Supply with HSTL Inputs and Outputs
Variable Drive HSTL Output Buffers
Expanded HSTL Output Voltage (1.4V–V
DD
)
Supports both 1.5V and 1.8V IO supply
Available in 165-ball FBGA Package (13 x 15 x 1.4 mm)
Offered in both Pb-free and non Pb-free Packages
JTAG 1149.1 compatible Test Access Port
Phase Locked Loop (PLL) for accurate Data Placement
Configurations
CY7C1522KV18 – 8M x 8
CY7C1529KV18 – 8M x 9
CY7C1523KV18 – 4M x 18
CY7C1524KV18 – 2M x 36
Table 1. Selection Guide
Description
Maximum Operating Frequency
Maximum Operating Current
x8
x9
x18
x36
333 MHz
333
510
510
520
640
300 MHz
300
480
480
490
600
250 MHz
250
420
420
430
530
200 MHz
200
370
370
380
450
167 MHz
167
340
340
340
400
Unit
MHz
mA
Cypress Semiconductor Corporation
Document Number: 001-00438 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 29, 2010
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