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BFQ29

Description
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
File Size231KB,10 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BFQ29 Overview

NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)

NPN Silicon RF Transistor
q
q
BFQ 29P
For low-noise IF and broadband amplifiers up to
1 GHz at collector currents from 1 mA to 20 mA.
CECC-type available: CECC 50002/258.
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BFQ 29P
Marking
KC
Ordering Code
(tape and reel)
Q62702-F659
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
65 ˚C
3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
3)
R
th JA
R
th JS
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
B
P
tot
T
j
T
A
T
stg
Values
15
20
3
30
4
280
150
– 65 … + 150
– 65 … + 150
Unit
V
mA
mW
˚C
385
305
K/W
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
3)
T
S
is measured on the collector lead at the soldering point to the pcb.
1)

BFQ29 Related Products

BFQ29 BFQ29P Q62702-F659
Description NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
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