NPN Silicon RF Transistor
q
q
BFQ 29P
For low-noise IF and broadband amplifiers up to
1 GHz at collector currents from 1 mA to 20 mA.
CECC-type available: CECC 50002/258.
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BFQ 29P
Marking
KC
Ordering Code
(tape and reel)
Q62702-F659
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
S
≤
65 ˚C
3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
3)
R
th JA
R
th JS
≤
≤
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
B
P
tot
T
j
T
A
T
stg
Values
15
20
3
30
4
280
150
– 65 … + 150
– 65 … + 150
Unit
V
mA
mW
˚C
385
305
K/W
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
3)
T
S
is measured on the collector lead at the soldering point to the pcb.
1)
BFQ 29P
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
V
CB
= 20 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 3 V,
I
C
= 0
DC current gain
I
C
= 3 mA,
V
CE
= 6 V
I
C
= 10 mA,
V
CE
= 6 V
Collector-emitter saturation voltage
I
C
= 20 mA,
I
B
= 1 mA
V
(BR)CE0
I
CB0
–
–
I
EB0
h
FE
50
50
V
CEsat
–
–
140
0.1
250
–
0.4
V
–
–
–
–
0.05
10
100
µ
A
Values
typ.
max.
Unit
15
–
–
V
µ
A
–
BFQ 29P
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC Characteristics
Transition frequency
I
C
= 3 mA,
V
CE
= 6 V,
f
= 200 MHz
I
C
= 20 mA,
V
CE
= 6 V,
f
= 200 MHz
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
I
C
=
i
c
= 0,
f
= 1 MHz
Output capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
Noise figure
I
C
= 3 mA,
V
CE
= 6 V,
f
= 10 MHz,
Z
S
= 75
Ω
I
C
= 4 mA,
V
CE
= 6 V,
f
= 800 MHz,
Z
S
= 50
Ω
Power gain
I
C
= 20 mA,
V
CE
= 6 V,
f
= 800 MHz,
Z
0
= 50
Ω,
Z
L
=
Z
Lopt
Transducer gain
I
C
= 20 mA,
V
CE
= 6 V,
f
= 1 GHz,
Z
0
= 50
Ω
Linear output voltage
two-tone intermodulation test
I
C
= 20 mA,
V
CE
= 6 V,
d
IM
= 60 dB,
f
1
= 806 MHz,
f
2
= 810 MHz,
Z
S
=
Z
L
= 50
Ω
Third order intercept point
I
C
= 20 mA,
V
CE
= 6 V,
f
= 800 MHz
f
T
–
3.6
C
cb
C
ce
C
ibo
C
obs
F
–
–
G
pe
–
0.9
1.5
14
1.2
–
–
–
–
–
–
2.7
5
0.5
0.28
1.35
0.8
–
–
0.65
–
–
–
dB
pF
GHz
Values
typ.
max.
Unit
I
S
21e
I
2
–
11
180
–
–
mV
V
o1
=
V
o2
–
IP
3
–
28
–
dBm
BFQ 29P
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
*Package mounted on alumina
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 6 V,
f
= 200 MHz
Collector-base capacitance
C
cb
=
f
(V
CB
)
V
BE
=
v
be
= 0,
f
= 1 MHz
BFQ 29P
Common Emitter Noise Parameters
f
GHz
F
min
dB
G
p
(F
min
)
dB
MAG
Γ
opt
ANG
R
N
Ω
N
–
F
50
Ω
dB
G
p
(F
50
Ω
)
dB
I
C
= 3 mA,
V
CE
= 6 V,
Z
0
= 50
Ω
0.01
0.85
–
(Z
S
= 130
Ω)
–
–
1.2
–
I
C
= 5 mA,
V
CE
= 6 V,
Z
0
= 50
Ω
0.01
0.8
0.85
1.25
–
13
(Z
S
= 100
Ω)
0.25
93.5
–
11.1
–
0.20
1.1
1.45
–
14
Noise figure
F
=
f
(Z
S
)
V
CE
= 6 V,
f
= 10 MHz
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