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MT9LSDT1672Y-13EXX

Description
Synchronous DRAM Module, 16MX72, 5.4ns, CMOS, LEAD FREE, DIMM-168
Categorystorage    storage   
File Size676KB,14 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT9LSDT1672Y-13EXX Overview

Synchronous DRAM Module, 16MX72, 5.4ns, CMOS, LEAD FREE, DIMM-168

MT9LSDT1672Y-13EXX Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeDIMM
package instructionDIMM,
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time5.4 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N168
JESD-609 codee4
memory density1207959552 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals168
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature55 °C
Minimum operating temperature
organize16MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
128MB, 256MB (x72, ECC, SR): 168-Pin SDRAM RDIMM
Features
SDRAM RDIMM
MT9LSDT1672 – 128MB
MT9LSDT3272 – 256MB
For component data sheets, refer to Micron’s Web site:
www.micron.com
Features
• 168-pin, PC133-compliant registered dual in-line
memory module (RDIMM)
• Phase-lock loop (PLL) clock driver to reduce loading
• Uses 133 MHz SDRAM components
• Supports ECC error detection and correction
• 128MB (16 Meg x 72) and 256MB (32 Meg x 72)
• V
DD
= +3.3V
• Fully synchronous; all signals are registered on the
positive edge of the PLL clock
• Internal pipelined operation; column address can be
changed every clock cycle
• Internal SDRAM banks for hiding row access/
precharge
• Programmable burst lengths (BL): 1, 2, 4, 8, or full
page
• Single rank
• Auto precharge option
• Auto and self refresh modes: 15.625µs (128MB) or
7.81µs (256MB) maximum periodic refresh interval
• LVTTL-compatible inputs and outputs
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
168-Pin RDIMM (MO-161 R/C A)
Figure 1:
Standard Layout
PCB height: 38.1mm (1.5in)
Figure 2:
Low Profile Layout
PCB height: 28.58mm (1.125in)
Options
Marking
• Package
168-pin DIMM
G
168-pin DIMM (Pb-free)
Y
1
• Frequency/CAS latency
133 MHz/CL = 2
-13E
133 MHz/CL = 3
-133
Notes: 1. CL = CAS (READ) latency; registered mode
will add one clock cycle to CL.
Table 1:
Speed
Grade
-13E
-133
Key Timing Parameters
Data Rate (MT/s)
Industry
Nomenclature
PC133
PC133
CL = 2
133
CL = 3
133
t
RCD
t
RP
t
RC
(ns)
15
20
(ns)
15
20
(ns)
60
66
PDF: 09005aef80a2e32f/Source: 09005aef80a2e30d
SD9C16_32x72.fm - Rev. D 1/08 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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