Cascadable Silicon Bipolar
MMIC Amplifiers
Technical Data
MSA-0435, -0436
Features
• Cascadable 50
Ω
Gain Block
• 3 dB Bandwidth:
DC to 3.8 GHz
• 12.5 dBm Typical P
1 dB
at
1.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
designed for use as a general
purpose 50
Ω
gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
Agilent’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0436.
35 micro-X Package
[1]
Note:
1.
Short leaded 36 package available
upon request.
Description
The MSA-0435 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5.25 V
2
2
MSA-0435, -0436 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
[4]
Absolute Maximum
[1]
100 mA
650 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,5]
:
θ
jc
= 140°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.1 mW/°C for T
C
> 109°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of q
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 50 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.5 GHz
Units
dB
dB
GHz
Min.
7.5
Typ.
8.5
±0.6
3.8
1.4:1
1.9:1
Max.
9.5
±1.0
dB
dBm
dBm
psec
V
mV/°C
4.75
6.5
12.5
25.5
125
5.25
–8.0
5.75
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0435
MSA-0436-BLK
MSA-0436-TR1
No. of Devices
10
100
1000
Container
Strip
Antistatic Bag
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
3
MSA-0435, -0436 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 50 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.08
.08
.07
.07
.05
.05
.04
.09
.14
.22
.28
.34
.37
.42
175
172
171
166
169
175
–142
–145
–154
–175
170
156
140
120
8.5
8.5
8.5
8.5
8.4
8.3
8.1
7.8
7.3
6.6
5.8
4.8
3.9
3.0
2.67
2.68
2.67
2.66
2.64
2.61
2.55
2.46
2.33
2.14
1.94
1.74
1.57
1.41
175
170
161
151
142
136
109
87
71
50
32
15
–1
–16
–16.4
–16.3
–16.4
–16.2
–16.1
–16.0
–15.0
–14.2
–13.1
–12.5
–11.7
–11.3
–10.7
–10.4
.151
.153
.151
.155
.156
.159
.178
.196
.221
.238
.260
.271
.291
.302
1
2
3
6
8
10
13
15
18
14
9
4
–2
–8
.20
.20
.20
.21
.22
.24
.26
.28
.31
.33
.35
.34
.33
.32
–10
–16
–33
–45
–57
–68
–96
–123
–140
–160
–173
–179
–171
–160
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
12
10
60
8
6
4
20
2
0
0
1
2
3
4
V
d
(V)
5
6
7
5
0.1 GHz
1.0 GHz
2.0 GHz
20
30
40
50
I
d
(mA)
60
70
G
p
(dB)
G
p
(dB)
I
d
(mA)
80
T
C
= +125°C
T
C
= +25°C
T
C
= –55°C
9
8
Gain Flat to DC
7
40
6
0.1
0.3 0.5
1.0
3.0
6.0
4
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 50 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
13
P
1 dB
(dBm)
21
P
1 dB
P
1 dB
(dBm)
7.5
12
11
10
9
18
I
d
= 70 mA
15
12
9
NF (dB)
NF (dB)
7.0
I
d
= 50 mA
6.5
G
p
(dB)
8
7
6
5
–55
–25
+25
G
P
8
7
6
3
0.1
I
d
= 30 mA
6.0
NF
6
+85
5
+125
I
d
= 30 mA
I
d
= 50 mA
I
d
= 70 mA
0.1
0.2 0.3
0.5
1.0
2.0
4.0
5.5
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
TEMPERATURE, (°C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
= 50 mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
35 micro-X Package Dimensions
.085
2.15
4
GROUND
.083 DIA.
2.11
RF OUTPUT
AND BIAS
3
.020
.508
2
GROUND
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
1
.057
±
.010
1.45
±
.25
.100
2.54
.022
.56
.455
±
.030
11.54
±
.75
.006
±
.002
.15
±
.05
A04
RF INPUT
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2001 Agilent Technologies, Inc.
Obsoletes 5965-9575E
October 31, 2001
5988-4738EN
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