IPW60R099CS
CoolMOS
Features
TM
Power Transistor
Product Summary
V
DS
R
DS(on),max
Q
g,typ
600
0.099
60
V
Ω
nC
• Lowest figure-of-merit R
ON
x Q
g
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
PG-TO247-3
CoolMOS CS is specially designed for:
• Hard switching SMPS topologies
• Zero-voltage switching SMPS topologies
• CCM PFC
Type
IPW60R099CS
Package
PG-TO247-3
Ordering Code
Q67045A5060
Marking
6R099
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Avalanche energy, repetitive
t
AR2),3)
Avalanche current, repetitive
t
AR2),3)
MOSFET dv /dt ruggedness
Gate source voltage
I
D,pulse
E
AS
E
AR
I
AR
dv /dt
V
GS
V
DS
=0...480 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
Mounting torque
P
tot
T
j
,
T
stg
M3 and M3.5 screws
T
C
=25 °C
T
C
=25 °C
I
D
=11 A,
V
DD
=50 V
I
D
=11 A,
V
DD
=50 V
Value
31
19
93
800
1.2
11
50
±20
±30
255
-55 ... 150
60
W
°C
Ncm
A
V/ns
V
mJ
Unit
A
Rev. 1.1
page 1
2005-03-10
IPW60R099CS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current
Symbol Conditions
I
S
I
S,pulse
T
C
=25 °C
Value
18
93
Unit
A
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R
thJC
R
thJA
leaded
1.6 mm (0.063 in.)
from case for 10 s
-
-
-
-
0.5
62
K/W
Soldering temperature, wavesoldering
T
sold
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
V
DS
=V
GS
,
I
D
=1.2 mA
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=600 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=18 A,
T
j
=25 °C
V
GS
=10 V,
I
D
=18 A,
T
j
=150 °C
Gate resistance
R
G
f
=1 MHz, open drain
600
2.1
-
3
-
3.9
V
Zero gate voltage drain current
I
DSS
-
-
10
µA
-
-
-
tbd
-
0.09
-
100
0.099
nA
Ω
-
-
0.24
1.3
-
-
Ω
Rev. 1.1
page 2
2005-03-10
IPW60R099CS
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
4)
Effective output capacitance, time
related
5)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V
SD
t
rr
Q
rr
I
rrm
V
R
=400 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
V
GS
=0 V,
I
F
=18 A,
T
j
=25 °C
-
-
-
-
0.9
450
12
70
1.2
-
-
-
V
ns
µC
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=400 V,
I
D
=18 A,
V
GS
=0 to 10 V
-
-
-
-
14
20
60
5.0
-
-
80
-
V
nC
C
iss
C
oss
C
o(er)
V
GS
=0 V,
V
DS
=0 V
to 480 V
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
V
DD
=400 V,
V
GS
=10 V,
I
D
=18 A,
R
G
=3.3
Ω
-
-
-
-
-
5
340
10
5
-
-
-
-
-
ns
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
-
-
-
2800
130
130
-
-
-
pF
Values
typ.
max.
Unit
1)
2)
3)
4)
5)
J-STD20 and JESD22
Pulse width
t
p
limited by
T
j,max
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=E
AR
*f.
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Rev. 1.1
page 3
2005-03-10
IPW60R099CS
1 Power dissipation
P
tot
=f(T
C
)
2 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
300
10
2
limited by on-state
resistance
10 µs
1 µs
100 µs
200
10
1
DC
1 ms
P
tot
[W]
I
D
[A]
10 ms
100
10
0
0
0
40
80
120
160
10
-1
10
0
10
1
10
2
10
3
T
C
[°C]
V
DS
[V]
3 Max. transient thermal impedance
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
D=t
p
/T
10
0
4 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
120
105
20 V
10 V
8V
0.5
90
10
-1
0.2
7V
75
Z
thJC
[K/W]
0.1
I
D
[A]
0.05
0.02
60
45
6V
10
-2
0.01
single pulse
5.5 V
30
5V
15
4.5 V
10
-3
10
-6
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0
5
10
15
20
t
p
[s]
V
DS
[V]
Rev. 1.1
page 4
2005-03-10
IPW60R099CS
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=150 °C
parameter:
V
GS
50
8V
10 V
20 V
6V
5.5 V
7V
6 Typ. drain-source on-state resistance
R
DS(on)
=f(I
D
);
T
j
=150 °C
parameter:
V
GS
0.5
40
0.4
5.5 V
6V
6.5 V
7V
R
DS(on)
[
Ω
]
30
0.3
5V
20 V
I
D
[A]
5V
20
4.5 V
0.2
10
0.1
0
0
5
10
15
20
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Drain-source on-state resistance
R
DS(on)
=f(T
j
);
I
D
=18 A;
V
GS
=10 V
8 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
0.3
160
0.25
120
0.2
25 °C
R
DS(on)
[
Ω
]
I
D
[A]
98 %
0.15
80
0.1
typ
150 °C
40
0.05
0
-60
-20
20
60
100
140
180
0
0
2
4
6
8
10
T
j
[°C]
V
GS
[V]
Rev. 1.1
page 5
2005-03-10
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