WE512K16-120G4M datasheet, PDF

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WE512K16-120G4M: DescriptionEEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,; Categorystorage storage; File Size396KB，10 Pages; ManufacturerWhite Electronic Designs Corporation; Websitehttp://www.wedc.com/

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WE512K16-120G4M Overview

EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,

WE512K16-120G4M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	White Electronic Designs Corporation
package instruction	QFF, QFL68,1.56SQ
Reach Compliance Code	unknown
Maximum access time	120 ns
Other features	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES
Data polling	YES
Data retention time - minimum	10
Durability	10000 Write/Erase Cycles
JESD-30 code	S-CQMA-F68
JESD-609 code	e0
memory density	8388608 bit
Memory IC Type	EEPROM MODULE
memory width	16
Number of functions	1
Number of terminals	68
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX16
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFF
Encapsulate equivalent code	QFL68,1.56SQ
Package shape	SQUARE
Package form	MICROELECTRONIC ASSEMBLY
page size	128 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Maximum slew rate	0.25 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
write protect	SOFTWARE

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Description	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,	EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation	White Electronic Designs Corporation
package instruction	QFF, QFL68,1.56SQ	QFF, QFL68,1.56SQ	QFF, QFL68,1.56SQ	QFF, QFL68,1.56SQ	QFF, QFL68,1.56SQ	QFF, QFL68,1.56SQ	QFF, QFL68,1.56SQ	QFF, QFL68,1.56SQ
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns	120 ns
Other features	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES	ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES
Data polling	YES	YES	YES	YES	YES	YES	YES	YES
Data retention time - minimum	10	10	10	10	10	10	10	10
Durability	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles	10000 Write/Erase Cycles
JESD-30 code	S-CQMA-F68	S-CQMA-F68	S-CQMA-F68	S-CQMA-F68	S-CQMA-F68	S-CQMA-F68	S-CQMA-F68	S-CQMA-F68
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	EEPROM MODULE	EEPROM MODULE	EEPROM MODULE	EEPROM MODULE	EEPROM MODULE	EEPROM MODULE	EEPROM MODULE	EEPROM MODULE
memory width	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	68	68	68	68	68	68	68	68
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	70 °C	70 °C	125 °C	125 °C	85 °C	85 °C
Minimum operating temperature	-55 °C	-55 °C	-	-	-55 °C	-55 °C	-40 °C	-40 °C
organize	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QFF	QFF	QFF	QFF	QFF	QFF	QFF	QFF
Encapsulate equivalent code	QFL68,1.56SQ	QFL68,1.56SQ	QFL68,1.56SQ	QFL68,1.56SQ	QFL68,1.56SQ	QFL68,1.56SQ	QFL68,1.56SQ	QFL68,1.56SQ
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
page size	128 words	128 words	128 words	128 words	128 words	128 words	128 words	128 words
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A
Maximum slew rate	0.25 mA	0.25 mA	0.25 mA	0.25 mA	0.25 mA	0.25 mA	0.25 mA	0.25 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	COMMERCIAL	COMMERCIAL	MILITARY	MILITARY	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
switch bit	NO	NO	NO	NO	NO	NO	NO	NO
write protect	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE	SOFTWARE

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