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S29CL016J0PQFI013

Description
Flash, 512KX32, 54ns, PQFP80, QFP-80
Categorystorage    storage   
File Size1MB,89 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

S29CL016J0PQFI013 Overview

Flash, 512KX32, 54ns, PQFP80, QFP-80

S29CL016J0PQFI013 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
package instructionQFP, QFP80,.7X.9,32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time54 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PQFP-G80
JESD-609 codee3
length20 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width32
Humidity sensitivity level3
Number of functions1
Number of departments/size16,30
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP80,.7X.9,32
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8/3.3,3.3 V
Programming voltage3.3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height3.35 mm
Department size2K,16K
Maximum standby current0.00006 A
Maximum slew rate0.09 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width14 mm
S29CD032J
S29CD016J
S29CL032J
S29CL016J
32/16 Mbit, 2.6/3.3 V, Dual Boot,
Simultaneous Read/Write, Burst Flash
General Description
The Cypress S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single V
CC
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
x32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
– CD016J and CL016J: Eight 2k Double word, Thirty 16k
Double word, and Eight 2k Double Word sectors
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k
Double Word, and Eight 2k Double Word sectors
VersatileI/O™ control (1.65V to 3.6V)
Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with wrap around
Secured Silicon Sector that can be either factory or
customer locked
20 year data retention (typical)
Cycling Endurance: 1 million write cycles per sector (typical)
Command set compatible with JEDEC (JC42.4) standard
Supports Common Flash Interface (CFI)
Extended Temperature range
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase operation
completion
Hardware (WP#) protection of two outermost sectors in the
large bank
Ready/Busy (RY/BY#) output indicates data available to
system
Suspend and Resume commands for Program and Erase
Operation
Offered Packages
– 80-pin PQFP
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)
– Pb-free package option available
– Known Good Die
Cypress Semiconductor Corporation
Document Number: 002-00948 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 19, 2017
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