arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/03
1
IS64LV6416L
PIN CONFIGURATIONS
44-Pin TSOP-II (T)
ISSI
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
®
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
48-Pin mini BGA (6mm x 8mm) (B)
1
2
3
4
5
6
PIN DESCRIPTIONS
A0-A15
I/O0-I/O15
CE
OE
WE
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
GND
V
DD
I/O
14
I/O
15
NC
OE
UB
I/O
10
I/O
11
I/O
12
I/O
13
NC
A8
A0
A3
A5
NC
NC
A14
A12
A9
A1
A4
A6
A7
NC
A15
A13
A10
A2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A11
NC
I/O
0
I/O
2
V
DD
GND
I/O
6
I/O
7
NC
LB
UB
NC
V
DD
GND
2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/03
IS64LV6416L
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
ISSI
V
DD
Current
I
SB
1
, I
SB
2
I
CC
I
CC
®
1
2
3
4
Write
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to V
DD
+0.5
–65 to +150
1.5
20
Unit
V
°C
W
mA
5
6
7
8
9
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Options
A1
A2
A3
Ambient Temperature
–40°C to +85°C
–40°C to +105°C
–40°C to +125°C
V
DD
3.3V ± 10%
3.3V ± 10%
3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
A1, A2
A3
Options
Min.
2.4
—
—
2
–0.3
–2
–2
Max.
—
0.4
0.5
V
DD
+ 0.3
0.8
2
2
Unit
V
V
V
V
V
µA
µA
10
11
12
Notes:
1. V
IL
(min.) = –2.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/03
3
IS64LV6416L
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
V
DD
Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
V
DD
= Max.,
I
OUT
= 0 mA, f = f
MAX
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
A1
A2
A3
A1
A2
A3
A1
A2
A3
typ
(2)
-10 ns
Min. Max.
—
—
—
—
—
—
—
—
—
—
95
—
—
15
—
—
2
—
—
0.5
-12 ns
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
105
115
—
18
20
—
3
5
0.5
ISSI
Unit
mA
®
I
SB
1
mA
I
SB
2
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 3.3V, T
A
= 25
o
C and not 100% tested.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/03
IS64LV6416L
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
ISSI
®
1
2
3
AC TEST LOADS
319
Ω
3.3V
3.3V
319
Ω
4
353
Ω
OUTPUT
30 pF
Including
jig and
scope
353
Ω
OUTPUT
5 pF
Including
jig and
scope
5
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Figure 1a.
Figure 1b.
READ CYCLE SWITCHING CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE
Access Time
OE
Access Time
OE
to High-Z Output
OE
to Low-Z Output
CE
to High-Z Output
CE
to Low-Z Output
LB, UB
Access Time
LB, UB
to High-Z Output
LB, UB
to Low-Z Output
-10 ns
Min. Max.
10
—
3
—
—
—
0
0
3
—
0
0
—
10
—
10
5
5
—
5
—
6
5
—
-12 ns
Min. Max.
12
—
3
—
—
—
0
0
3
—
0
0
—
12
—
12
6
6
—
6
—
6
6
—
(1)
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2
t
LZCE
(2)
t
BA
t
HZB
t
LZB
8
9
10
11
12
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
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