EDI8F16256C20M9I datasheet, PDF

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EDI8F16256C20M9I: DescriptionSRAM Module, 1MX4, 20ns, CMOS,; Categorystorage storage; File Size272KB，6 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI8F16256C20M9I Overview

SRAM Module, 1MX4, 20ns, CMOS,

EDI8F16256C20M9I Parametric

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
Reach Compliance Code	unknown
Maximum access time	20 ns
Other features	CONFIGURABLE AS 256K X 16
Spare memory width	8
JESD-30 code	R-XDMA-T48
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX4
Output characteristics	3-STATE
Exportable	NO
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	THROUGH-HOLE
Terminal location	DUAL

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EDI8F16256C20M9I Related Products

	EDI8F16256C20M9I	EDI8F16256C35M9I	EDI8F16256C20M9C	EDI8F16256C35M9C	EDI8F16256C25M9I	EDI8F16256C25M9C
Description	SRAM Module, 1MX4, 20ns, CMOS,	SRAM Module, 1MX4, 35ns, CMOS,	SRAM Module, 1MX4, 20ns, CMOS,	SRAM Module, 1MX4, 35ns, CMOS,	SRAM Module, 1MX4, 25ns, CMOS,	SRAM Module, 1MX4, 25ns, CMOS,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	20 ns	35 ns	20 ns	35 ns	25 ns	25 ns
Other features	CONFIGURABLE AS 256K X 16	CONFIGURABLE AS 256K X 16	CONFIGURABLE AS 256K X 16	CONFIGURABLE AS 256K X 16	CONFIGURABLE AS 256K X 16	CONFIGURABLE AS 256K X 16
Spare memory width	8	8	8	8	8	8
JESD-30 code	R-XDMA-T48	R-XDMA-T48	R-XDMA-T48	R-XDMA-T48	R-XDMA-T48	R-XDMA-T48
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	48	48	48	48	48	48
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	70 °C	70 °C	85 °C	70 °C
organize	1MX4	1MX4	1MX4	1MX4	1MX4	1MX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	NO	NO	NO	NO	NO	NO
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	EDI [Electronic devices inc.]	-	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]

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