N-CHANNEL ENHANCEMENT
MODE VERTICAL IGBT
ISSUE 2 MAY 94
ZCN0545A
This IGBT combines the high input impedance of the DMOSFET
with the high current density of the BJT.
FEATURES
* Extremely low on state voltage
* No need to derate for higher temperatures
* Excellent temperature immunity
* High input impedance
* Reverse blocking characteristic which is
Independent of gate bias
* Low input capacitance
* Characterised for logic level drive
APPLICATIONS
* Fluorescent lamp driver
* Automotive load drivers
* High voltage DC-DC converters
* Darlington replacement
* Telecoms hook switch and earth recall switch
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS (at T
amb
=25°C unless otherwise stated)
PARAMETER
SYMBOL
V
DS
V
SD
I
D
I
DP
I
DMR
I
DM
V
GS
P
tot
P
DP
T
j
:T
stg
@ T
amb
=25°C
@ T
amb
=125°C
VALUE
450
30
0.32
0.37
2
1
±
20
UNIT
V
V
A
A
A
A
V
W
W
°C
Forward Drain-Source Voltage
Reverse Drain Source Voltage
Continuous Drain Current
Practical Continuous Drain Current*
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Practical Power Dissipation*
Operating and Storage Temperature Range
0.6
0.8
-55 to +125
* With the device mounted in a typical manner on a P.C.B. with at least 1 sq. inch of copper.
3-112
ZCN0545A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Forward Drain-Source
Breakdown Voltage
Reverse Drain-Source
Breakdown Voltage (4)
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
Drain Source
Saturation Voltage (1)
SYMBOL MIN.
BV
DSS
BV
SD
V
GS(th)
I
GSS
I
DSS
V
DS(SAT)
450
30
1
3
20
10
400
3
3
6
90
12
6
150
200
300
TYP.
MAX.
UNIT CONDITIONS.
V
V
V
nA
µ
A
µ
A
V
GS
=0V
I
D
=1mA
ID=1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=max. rating, V
GS
=0
V
DS
=0.8 x max. rating, V
GS
=0V,
T=125°C
(2)
I
D
=500mA, V
GS
=10 V
I
D
=250mA, V
GS
=5 V
V
GS
=10V,I
D
=0.5A
V
V
Ω
Static Drain-Source
R
DS(on)
On-State Resistance (1)
Input Capacitance (2)
C
iss
Common Source
C
oss
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Switching Times (2)(3)
C
rss
t
on
t
off
pF
pF
pF
ns
ns
V
DD
≈
25V, V
GEN
=10V
I
D
=1A, R
GS
=50
Ω
V
DS
=25 V, V
GS
=0V, f=1MHz
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
(4) One minute maximum duration. Exceeds common international automotive reverse battery test
specifications
t
0.8
1
t
0.6
200
D=1 (DC)
160
0.4
p
D= t
t
1
p
120
D=0.5
0.2
80
40
D=0.2
D=0.1
0
0
25
50
75
100
125
0
100us
1ms
10ms
100ms
SINGLE PULSE
1s
10s
100s
Temperature
Pulse Width
Derating Curve
Transient Thermal Resistance
3-113
ZCN0545A
TYPICAL CHARACTERISTICS
V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
/5
=10V
9V
NOTE : 80
µ
s
Pulsed test
2.0
8V
1.6
7V
1.2
6V
0.8
5V
4V
0.4
3V
0
0
2
4
6
8
10
0
0
50
100
125
V
DS
- Drain Source Voltage (V)
T
J
- Juntion Temperature (°C)
Saturation Characteristics
Pulsed Current v Temperature
80
C
iss
0.5
0.4
60
0.3
NOTE : V
40
/5
=0V
0.2
20
C
C
0
1
10
100
oss
rss
NOTE : 80
µ
s Pulsed test
V =0V
DS
0.1
0
0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain Source Voltage (V)
I
D
- Drain Current (A)
Capacitance v Drain Source Voltage
Transconductance v Drain Current
10
3.5
3.0
µ
1
2.5
V
DS
=0V
2.0
1.5
DC
1s
0.1s
1 ms
1 00us
0.1
1.0
0.5
0.01
1
10
100
1000
0
0.01
0.1
1
10
V
DS
- Drain Source Voltage (V)
I
D
- Drain Current (A)
Safe Operating Area
(T
amb
=25°C, single pulse)
Fall Time v Drain Current
3-114
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