|
ZVN3320A |
ZVN3320B |
| Description |
Small Signal Field-Effect Transistor, 0.1A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 |
| Is it Rohs certified? |
conform to |
incompatible |
| Maker |
Zetex Semiconductors |
Zetex Semiconductors |
| package instruction |
IN-LINE, R-PSIP-W3 |
CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code |
not_compliant |
unknown |
| ECCN code |
EAR99 |
EAR99 |
| Configuration |
SINGLE |
SINGLE |
| Minimum drain-source breakdown voltage |
200 V |
200 V |
| Maximum drain current (Abs) (ID) |
0.1 A |
0.25 A |
| Maximum drain current (ID) |
0.1 A |
0.25 A |
| Maximum drain-source on-resistance |
25 Ω |
25 Ω |
| FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code |
R-PSIP-W3 |
O-MBCY-W3 |
| JESD-609 code |
e3 |
e0 |
| Number of components |
1 |
1 |
| Number of terminals |
3 |
3 |
| Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| Maximum operating temperature |
200 °C |
150 °C |
| Package body material |
PLASTIC/EPOXY |
METAL |
| Package shape |
RECTANGULAR |
ROUND |
| Package form |
IN-LINE |
CYLINDRICAL |
| Peak Reflow Temperature (Celsius) |
260 |
235 |
| Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
| Maximum power dissipation(Abs) |
0.625 W |
5 W |
| Certification status |
Not Qualified |
Not Qualified |
| surface mount |
NO |
NO |
| Terminal surface |
Matte Tin (Sn) |
Tin/Lead (Sn/Pb) |
| Terminal form |
WIRE |
WIRE |
| Terminal location |
SINGLE |
BOTTOM |
| Maximum time at peak reflow temperature |
40 |
NOT SPECIFIED |
| transistor applications |
SWITCHING |
SWITCHING |
| Transistor component materials |
SILICON |
SILICON |
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