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Datasheet> All Categories > Discrete semiconductor> The transistor> ZXM66N02N8TA
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ZXM66N02N8TA

Description
Small Signal Field-Effect Transistor, 9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size78KB，4 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric View All

ZXM66N02N8TA Overview

Small Signal Field-Effect Transistor, 9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

ZXM66N02N8TA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.015 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

ZXM66N02N8TA Preview

ZXM66N02N8
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
=20V; R
DS(ON)
=0.015
D
=9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
SO8
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
2 1
S
S
D
D
D
ORDERING INFORMATION
DEVICE
ZXM66N02N8TA
REEL SIZE
(inches)
13
TAPE WIDTH (mm)
12mm embossed
QUANTITY
PER REEL
1000 units
S
3
DEVICE MARKING
•
ZXM6
6N02
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
4
Top View
5
6
7
8
ZXM66N02N8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
LIMIT
20
±12
9.0
8.0
35
3.1
35
-
-
-
-
2.5
20
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
-
30
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
ZXM66N02N8
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
-
-
0.95
V
ns
nC
T
j
=25°C, I
S
=4.1A,
V
GS
=0V
T
j
=25°C, I
F
=4.1A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
-
-
-
-
-
-
-
ns
ns
ns
ns
nC
nC
nC
V
DS
=16V,V
GS
=4.5V
I
D
=4.1A
(Refer to test circuit)
V
DD
=10V, I
D
=4.1A
R
G
=6.0Ω, R
D
=2.4Ω
(Refer to test circuit)
C
iss
C
oss
C
rss
-
-
-
pF
pF
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
11
0.7
0.015
0.020
20
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
GS
=±12V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
SYMBOL MIN.
TYP.
MAX.
UNI CONDITIONS.
T
V
GS
=4.5V, I
D
=4.1A
V
GS
=2.5V, I
D
=3.5A
V
DS
=15V,I
D
=4.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
ZXM66N02N8
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (631) 543-7100
Fax: (631) 864-7630
Zetex (Asia) Ltd.
3701-04 Metroplaza, Tower 1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex
plc 2000
Internet http://www.zetex.com
:
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
DRAFT ISSUE A - AUGUST 2000
ADVANCED INFORMATION
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