Variable Capacitance Diode, 8.2pF C(T), Silicon, Hyperabrupt, SOT-23, 3 PIN
| Parameter Name | Attribute value |
| Maker | Advanced Semiconductor, Inc. |
| Parts packaging code | SOT-23 |
| package instruction | R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | COMMON CATHODE, 2 ELEMENTS |
| Diode Capacitance Tolerance | 10% |
| Minimum diode capacitance ratio | 6 |
| Nominal diode capacitance | 8.2 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 2 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Maximum power dissipation | 0.25 W |
| Certification status | Not Qualified |
| minimum quality factor | 250 |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Varactor Diode Classification | HYPERABRUPT |

| AHV1003CC | AHV1004 | AHV1010 | AHV1007 | |
|---|---|---|---|---|
| Description | Variable Capacitance Diode, 8.2pF C(T), Silicon, Hyperabrupt, SOT-23, 3 PIN | Variable Capacitance Diode, 10pF C(T), Silicon, Hyperabrupt, SOT-23, 3 PIN | Variable Capacitance Diode, 33pF C(T), Silicon, Hyperabrupt, SOT-23, 3 PIN | Variable Capacitance Diode, 18pF C(T), Silicon, Hyperabrupt, SOT-23, 3 PIN |
| Maker | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
| Parts packaging code | SOT-23 | SOT-23 | SOT-23 | SOT-23 |
| package instruction | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | COMMON CATHODE, 2 ELEMENTS | SINGLE | SINGLE | SINGLE |
| Diode Capacitance Tolerance | 10% | 10% | 10% | 10% |
| Minimum diode capacitance ratio | 6 | 6 | 9 | 7 |
| Nominal diode capacitance | 8.2 pF | 10 pF | 33 pF | 18 pF |
| Diode component materials | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 2 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Maximum power dissipation | 0.25 W | 0.25 W | 0.25 W | 0.25 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| minimum quality factor | 250 | 250 | 150 | 175 |
| surface mount | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT |