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P6C28C64X-35CWM

Description
EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, SDIP-28
Categorystorage    storage   
File Size138KB,11 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
Download Datasheet Parametric View All

P6C28C64X-35CWM Overview

EEPROM, 8KX8, 350ns, Parallel, CMOS, CDIP28, 0.600 INCH, SIDE BRAZED, CERAMIC, SDIP-28

P6C28C64X-35CWM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerPyramid Semiconductor Corporation
Parts packaging codeDIP
package instruction0.600 INCH, SIDE BRAZED, CERAMIC, SDIP-28
Contacts28
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time350 ns
JESD-30 codeR-CDIP-T28
JESD-609 codee0
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height5.89 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm
Maximum write cycle time (tWC)10 ms
P6C28C64
8K x 8 EEPROM
FEATURES
Access Times of 200, 250, 300 and 350 ns
Single 5V±10% Power Supply
Simple Byte and Page Write
Low Power CMOS:
- 60 mA Active Current
- 200 µA Standby Current
Fast Write Cycle Times
Software Data Protection
Fully TTL Compatible Inputs and Outputs
Endurance: 10,000 or 100,000 Cycles
Data Retention: 100 Years
Available in the following Packages:
– 32-Pin Ceramic LCC (450 x 550 mils)
– 28-Pin 600 mil Ceramic DIP
DESCRIPTION
The P6C28C64 is a 5 Volt 8Kx8 EEPROM using floating
gate CMOS Technology. The device supports 64-byte
page write operation. The P6C28C64 features
DATA
and
Toggle Bit Polling as well as a system software scheme
used to indicate early completion of a Write Cycle. The
device also includes user-optional software data protec-
tion. Endurance is 10,000 or 100,000 Cycles and Data
Retention is 100 Years. The device is available in a 32-Pin
LCC package as well as a 28-Pin 600 mil wide Ceramic
DIP.
PIN CONFIGURATIONS
FUNCTIONAL BLOCK DIAGRAM
DIP (C5-1)
1519B
LCC (L6)
Document #
EEPROM101
REV A
Revised May 2007
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