KSC900
KSC900
Low Frequency & Low Noise Amplifier
• Collector-Base Voltage : V
CBO
=30V
• Low Noise Level : NL=50mV (MAX)
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
25
5
50
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
NL
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Noise Level
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=3V, I
C
=0.5mA
I
C
=20mA, I
B
=2mA
V
CE
=3V, I
C
=0.5mA
V
CE
=3V, I
C
=1mA
V
CC
=12V, I
C
=0.1mA
R
S
=25kΩ
A
V
=80dB, f=1KHz
120
0.1
0.62
100
30
50
Min.
30
25
5
50
100
1000
0.2
0.7
V
V
MHz
mV
Typ.
Max.
Units
V
V
V
nA
nA
h
FE
Classification
Classification
h
FE
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
V
600 ~ 1000
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
KSC900
Typical Characteristics
10
9
I
B
= 90
µ
A
I
B
= 80
µ
A
500
V
CE
=3V
450
400
I
C
[mA], COLLECTOR CURRENT
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
h
FE
, DC CURRENT GAIN
I
B
= 70
µ
A
I
B
= 60
µ
A
I
B
= 50
µ
A
I
B
= 40
µ
A
I
B
= 30
µ
A
I
B
= 20
µ
A
I
B
= 10
µ
A
350
300
250
200
150
100
50
0
0.01
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
I
C
=10I
B
10
V
CE
=3V
1
V
BE(sat)
I
C
[mA], COLLECTOR CURRENT
10
100
1
0.1
V
CE(sat)
0.01
0.1
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
10
1000
f = 1MHz
I
E
=0
V
CE
=3V
C
ob
[pF], CAPACITANCE
100
10
1
1
10
100
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B1, September 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
FPGA/CPLD
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