2SA2151
Audio Amplification Transistor
Features and Benefits
Small package (TO-3P)
High power handling capacity, 160 W
Improved sound output by reduced on-chip impedance
For professional audio (PA) applications, V
CEO
= –200 V
versions available
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Complementary to 2SC6011
▪
Recommended output driver: 2SA1668
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Description
By adapting the Sanken unique wafer-thinner technique, these
PNP power transistors achieve power-up by decreasing thermal
resistance, and provide higher voltage avalanche breakdown
rating. The high power-handling capacity of the TO-3P package
allows a smaller footprint on the circuit board design. This
series of transistors is very well suited to not only multichannel
applications for AV (audio-visual) amplifiers and receivers,
but also parallel connection applications for PA (professional
audio system) amplifiers.
Applications include the following:
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▪
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Single transistors for audio amplifiers
Home audio amplifiers
Professional audio amplifiers
Automobile audio amplifiers
Audio market
Single transistors for general purpose
Package: 3-Lead TO-3P
Not to scale
Equivalent Circuit
E
3
B
1
C
2
38100, Rev. 1
SANKEN ELECTRIC CO., LTD.
http://www.sanken-ele.co.jp/en/
2SA2151
Audio Amplification Transistor
SELECTION GUIDE
Part Number
Type
h
FE
Rating
Range O: 50 to 100
2SA2151*
PNP
Range P: 70 tp 140
Range Y: 90 to 180
*Specify h
FE
range when ordering. If no h
FE
range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
30 pieces per tube
Packing
ABSOLUTE MAXIMUM RATINGS at T
A
= 25°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
stg
Rating
–200
–200
–6
–15
–4
160
150
–55 to150
Unit
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS at T
A
= 25°C
Characteristic
Collector-Cutoff Current
Emitter Cutoff Current
Collector-Emitter Voltage
DC Current Transfer Ratio*
Collector-Emitter Saturation Voltage
Cutoff Frequency
Output Capacitance
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE(sat)
f
T
C
OB
V
CB
= –200 V
V
EB
= –6 V
I
C
= –50 mA
V
CE
= –4 V, I
C
= –3 A
I
C
= –5 A, I
B
= –0.5 A
V
CE
= –12 V, I
E
= 0.5 A
V
CB
= –10 V, I
E
= 0 A, f = 1 MHz
Test Conditions
Min.
–
–
–200
50
–
–
–
Typ.
–
–
–
–
–
20
450
Max.
–10
–10
–
180
–0.5
–
–
Unit
μA
μA
V
–
V
MHz
pF
*
h
FE
rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).
38100, Rev. 1
SANKEN ELECTRIC CO., LTD.
2
2SA2151
Audio Amplification Transistor
Performance Characteristics
15
1A
m
700
A
m
500
A
3
A
300 m
A
200 m
I
C
vs. V
CE
–I
C
(A)
100 mA
V
CE(sat)
vs. I
B
5
50 mA
–I
B
= 20 mA
–V
CE(sat)
(V)
10
2
1
–I
C
= 5 A
0
0
1
2
–V
CE
(V)
3
4
0
0
0.5
–I
C
= 10 A
–I
B
(A)
1.0
1.5
2.0
15
1000
–I
C
(A)
I
C
vs. V
BE
–V
CE
= 4 V Continuous
°C
25°C
5
–30°C
–V
CE
= 4 V Continuous
10
h
FE
vs. I
C
125
h
FE
10
100
Typ.
0
0
0.5
–V
BE
(V)
1.0
1.5
2.0
1
0.01
0.1
1000
10.00
1
–I
C
(A)
10
100
125°C
h
FE
–V
CE
= 4 V Continuous
10
h
FE
vs. I
C
–30°C
R
θJA
vs. t
R
θJA
(°C/W)
100
25°C
1.00
0.10
1
0.01
0.1
1
–I
C
(A)
10
100
0.01
1
10
t (ms)
100
1000
38100, Rev. 1
SANKEN ELECTRIC CO., LTD.
3
2SA2151
Audio Amplification Transistor
Performance Characteristics, continued
Safe Operating Area
T
A
= 25°C, single pulse, no heatsink, natural cooling
100.0
10
m
s
10
10.0
DC
0m
s
–I
C
(A)
1.0
0.1
0.01
1
10
–V
CE
(V)
100
1000
30
200
Typ.
150
f
T
(MHz)
20
W
ith
In
P
C
(W)
fin
–V
CE
= 12 V Continuous
f
T
vs. I
E
P
C
vs. T
A
10
100
ite
He
at
sin
k
50
Without Heatsink
0
25
50
75
100
T
A
(°C)
125
150
0
3.5
0.01
0.1
1
10
100
0
I
E
(A)
38100, Rev. 1
SANKEN ELECTRIC CO., LTD.
4
2SA2151
Audio Amplification Transistor
Package Outline Drawing, TO-3P
15.8 ±0.2
15.6 ±0.3
2.0 ±0.2
5.0 ±0.2
1.8 ±0.3
6.0 ±0.2
14.0 ±0.3
13.6 ±0.2
9.6 ±0.2
5.0 MAX
2.1 MAX
Exposed
heatsink pad
XXXXXXXX
XXXXX
XXXXX
19.9 ±0.3
Ø3.2 ±0.1
1.7
–0.1
+0.2
+0.2
Branding
Area
2
–0.1
3
+0.2
3.5
2
–0.1
+0.2
0.6
–0.1
20.0 MIN
View B
+0.2
–0.1
+0.2
–0.1
1.0
View A
5.45 ±0.1
Terminal dimension at lead tip
1
2
3
0.7 MAX
0.7 MAX
View A
View B
Gate burr: 0.3 mm (max.), mold flash may appear at opposite side
Terminal core material: Cu
Terminal treatment: Ni plating and Pb-free solder dip
Leadform: 100
Package: TO-3P (M100)
Approximate weight: 6 g
Dimensions in millimeters
Branding codes (exact appearance at manufacturer discretion):
1st line, type: A2151
2nd line left, lot:
YM
Where: Y is the last digit of the year of manufacture
M is the month (1 to
9, O, N, D)
2nd line right, subtype:
H
Where: H is the h
FE
rating (O,
P,
or
Y;
for values see
footnote, Electrical Characteristics table)
Leadframe plating Pb-free. Device composition
includes high-temperature solder (Pb >85%),
which is exempted from the RoHS directive.
38100, Rev. 1
SANKEN ELECTRIC CO., LTD.
5
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