P6SMB100ALEADFREE datasheet, PDF

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P6SMB100ALEADFREE: DescriptionTrans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, SMB, 2 PIN; CategoryDiscrete semiconductor diode; File Size987KB，3 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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P6SMB100ALEADFREE Overview

Trans Voltage Suppressor Diode, 600W, 85.5V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, SMB, 2 PIN

P6SMB100ALEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	105 V
Minimum breakdown voltage	95 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	85.5 V
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN (315)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	10

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P6SMB6.8A

THRU

P6SMB250A

SURFACE MOUNT

UNI-DIRECTIONAL

GLASS PASSIVATED JUNCTION

SILICON TRANSIENT

VOLTAGE SUPPRESSOR

600 WATTS, 6.8 THRU 250 VOLTS

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR P6SMB6.8A Series

types are Surface Mount Uni-Directional Glass

Passivated Junction Transient Voltage Suppressors

designed to protect voltage sensitive components from

high voltage transients.

THIS DEVICE IS MANUFACTURED WITH A GLASS

PASSIVATED CHIP FOR OPTIMUM RELIABILITY.

Note: For Bi-directional devices, please refer to the

P6SMB6.8CA Series data sheet.

Specified

BREAKDOWN

VOLTAGE

SMB CASE

• This series is UL listed, UL file number E130224

MARKING CODE: SEE ELECTRICAL

CHARACTERISTICS TABLE

SYMBOL

PDM

IFSM

TJ, Tstg

600

100

-65 to +150

UNITS

°C

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

Peak Power Dissipation (Note 1)

Peak Forward Surge Current (JEDEC Method)

Operating and Storage Junction Temperature

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

Working

Peak

Reverse

Voltage

VRWM

(V)

5.8

6.4

7.02

7.78

8.55

9.4

10.2

11.1

12.8

13.6

15.3

17.1

18.8

20.5

23.1

25.6

28.2

30.8

33.3

Maximum

Reverse

Leakage

Current

@ VRWM

(μA)

1000

500

200

5.0

Maximum

Reverse

Surge

Current

(Note 1)

IRSM

(A)

14.4

13.2

12.0

11.2

Maximum

Reverse

Voltage

@ IRSM

VRSM

(V)

10.5

11.3

12.1

13.4

14.5

15.6

16.7

18.2

21.2

22.5

25.2

27.7

30.6

33.2

37.5

41.4

45.7

49.9

53.9

Maximum

Temp.

Coefficient

of VBR

Type

Breakdown Voltage

VBR @ IT

Test

Current

Marking

Code

MIN

(V)

P6SMB6.8A

P6SMB7.5A

P6SMB8.2A

P6SMB9.1A

P6SMB10A

P6SMB11A

P6SMB12A

P6SMB13A

P6SMB15A

P6SMB16A

P6SMB18A

P6SMB20A

P6SMB22A

P6SMB24A

P6SMB27A

P6SMB30A

P6SMB33A

P6SMB36A

P6SMB39A

6.45

7.13

7.79

8.65

9.5

10.5

11.4

12.4

14.3

15.2

17.1

19.0

20.9

22.8

25.7

28.5

31.4

34.2

37.1

NOM

(V)

6.8

7.5

8.2

9.1

MAX

(V)

7.14

7.88

8.61

9.55

10.5

11.6

12.6

13.7

15.8

16.8

18.9

21.0

23.1

25.2

28.4

31.5

34.7

37.8

41.0

(mA)

1.0

% / °C

0.057

0.061

0.065

0.068

0.073

0.075

0.078

0.081

0.084

0.086

0.088

0.090

0.092

0.094

0.096

0.097

0.098

0.099

0.100

C6V8A

C7V5A

C8V2A

C9V1A

C10A

C11A

C12A

C13A

C15A

C16A

C18A

C20A

C22A

C24A

C27A

C30A

C33A

C36A

C39A

Notes: (1) Non-repetitive 10x1,000μs pulse.

R4 (28-May 2009)

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