UTC 2SA733
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA733 is an low frequency amplifier.
1
FEATURES
*Collector-Emitter voltage:
BV
CBO
=-50V
*Collector current up to –150mA
*High hFE linearity
*Complimentary to 2SC945
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25°C
)
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
-60
-50
-5
250
-150
125
-55 ~ +150
UNIT
V
V
V
mW
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE1
V
CE
(sat)
f
T
Cob
NF
TEST CONDITIONS
Ic=-100µA, I
E
=0
I
C
=-10mA,I
B
=0
V
CB
=-40V,I
E
=0
V
EB
=-3V,Ic=0
V
CE
=-6V,Ic=-1mA
Ic=-100mA,I
B
=-10mA
V
CE
=-10V,Ic=-50mA
V
CB
=-10V,I
E
=0,f=1MHz
Ic=-0.1mA,V
CE
=-6V
R
G
=10kΩ,f=100Hz
MIN
-60
-50
TYP
MAX
UNIT
V
V
nA
nA
90
-0.1
190
2.0
4.0
-100
-100
600
-0.3
3.0
6.0
100
V
MHz
pF
dB
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
UTC 2SA733
RANK
RANGE
NPN EPITAXIAL SILICON TRANSISTOR
R
90-180
Q
135-270
P
200-400
K
300-600
CLASSIFICATION OF hFE
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
-100
3
10
Fig.2 DC current Gain
2
10
Fig.3 Base-Emitter on Voltage
V
CE
=-6V
Ic,Collector current (mA)
Ic,Collector current (mA)
-80
H
FE
, DC current Gain
I
B
= -300
µA
-60
2
10
1
10
V
CE
=-6V
I
B
= -250
µA
I
B
= -200
µA
I
B
= -150
µA
-40
1
10
0
10
-20
I
B
= -100
µA
I
B
= -50
µA
0
0
-4
-8
-12
-16
-20
0
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
-0.2
-0.4
-0.6
-0.8
-1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4
10
3
10
Fig.5 Current gain-bandwidth
product
2
10
Fig.6 Collector output
Capacitance
Ic=10*I
B
Current Gain-bandwidth
product,f
T
(MHz)
Saturation voltage (MV)
V
CE
=-6V
2
10
Cob,Capacitance (pF)
3
10
V
BE
(sat)
1
10
f=1MHz
I
E
=0
2
10
V
CE
(sat)
1
10
0
10
1
10
-1
10
0
10
1
10
2
10
3
10
0
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
Analog electronics
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