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Datasheet> All Categories > Discrete semiconductor> The transistor> FZT855
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FZT855

Description
Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size408KB，7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
Download Datasheet Parametric View All

FZT855 Overview

Power Bipolar Transistor, 5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

FZT855 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-223
package instructionSOT-223, 4 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)90 MHz

FZT855 Preview

A Product Line of
Diodes Incorporated
 
Green
FZT855
150V NPN MEDIUM POWER TRANSISTOR IN SOT223
Features
BV
CEO
> 150V
I
C
= 5A high Continuous Collector Current
I
CM
= 10A Peak Pulse Current
Very Low Saturation Voltage V
CE(sat)
< 110mV @ 1A
R
CE(sat)
= 50mΩ for a Low Equivalent On-Resistance
h
FE
Specified Up to 10A for a High Gain Hold Up
Complementary PNP Type: FZT955
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
SOT223
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
FZT855TA
Notes:
Marking
FZT855
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html
Marking Information
FZT
855
FZT855 = Product type Marking Code
FZT855
Document Number DS33176 Rev. 5 - 2
1 of 7
www.diodes.com
March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT855
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
250
150
7
5
10
1
Unit
V
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
P
D
R
JA
R
JA
R
JL
T
J,
T
STG
Symbol
Value
3.0
24
1.6
12.8
42
78
8.84
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
≥
8,000
≥
400
Unit
V
V
JEDEC Class
3B
C
5. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 25mm X 25mm single sided 1oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT855
Document Number DS33176 Rev. 5 - 2
2 of 7
www.diodes.com
March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT855
Thermal Characteristics and Derating Information
I
C
Collector Current (A)
10
Limit
Max Power Dissipation (W)
V
CE(sat)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm
Single sided 1oz Cu
52mmX52mm
Single sided 2oz Cu
1
DC
1s
100ms
Single Pulse T
amb
=25°C
100m
52mmX52mm
Single sided 2oz Cu
10ms
1ms
100µs
10m
100m
V
CE
Collector-Emitter Voltage (V)
1
10
100
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse T
amb
=25°C
Thermal Resistance (°C/W)
Max Power Dissipation (W)
40
30
52mmX52mm
Single sided 2oz Cu
100
52mmX52mm
Single sided 2oz Cu
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
Pulse Width (s)
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
FZT855
Document Number DS33176 Rev. 5 - 2
3 of 7
www.diodes.com
March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT855
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
DC Current Gain (Note 9)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
R
≤
1kΩ
Min
250
250
150
7



100
100
15

Typ
375
375
180
8


20
35
60
260
200
200
30
10
90
22
66
2130
Max

50
1
50
1
10
40
65
110
355
1250
1100
300

Unit
V
V
V
V
nA
µA
nA
µA
nA
mV
mV
mV
I
CER
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Current Gain-Bandwidth Product (Note 9)
Output Capacitance (Note 9)
Switching Times
Notes:
f
T
C
obo
t
on
t
off
MHz
pF
ns
ns
Test Condition
I
C
= 100µA
I
C
= 1µA,R
B
≤
1kΩ
I
C
= 1mA
I
E
= 100µA
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
V
CB
= 200V
V
CB
= 200V, @T
A
= +100°C
V
EB
= 6V
I
C
= 100mA, I
B
= 5mA
I
C
=500mA, I
B
= 50mA
I
C
=1A, I
B
= 100mA
I
C
=5A, I
B
= 500mA
I
C
=5A, I
B
= 500mA
I
C
= 5A, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 5A, V
CE
= 5V
I
C
= 10A, V
CE
= 5V
V
CE
= 10V, I
C
= 100mA
f = 50MHz
V
CB
= 10V. f = 1MHz
I
C
= 1A, V
CC
= 50V
I
B1
= -I
B2
= 100mA
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
FZT855
Document Number DS33176 Rev. 5 - 2
4 of 7
www.diodes.com
March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT855
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
FZT855
Document Number DS33176 Rev. 5 - 2
5 of 7
www.diodes.com
March 2013
© Diodes Incorporated
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