ZTX948STZ datasheet, PDF - EEWORLD Datasheet

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ZTX948STZ: DescriptionPower Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size95KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX948STZ Overview

Power Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX948STZ Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Maximum collector current (IC)	4.5 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz

ZTX948STZ Preview

PNP SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 2 JUNE 94

FEATURES

* 4.5 Amps continuous current

* Up to 20 Amps peak current

* Very low saturation voltage

* Excellent gain up to 20 Amps

* Very low leakage

* Exceptional gain linearity down to 10mA

* Spice model available

ZTX948

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

totp

tot

:Tstg

-40

-20

-6

-20

-4.5

1.58

1.2

E-Line

TO92 Compatible

VALUE

UNIT

°C

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltag

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

SYMBOL

(BR)CBO

(BR)CER

(BR)CEO

(BR)EBO

CBO

CER

≤

Ω

EBO

CE(sat)

-45

-90

-180

-230

-960

3-309

MIN.

-40

-20

-6

TYP.

-55

-30

-8

-50

-1

-50

-1

-10

-100

-150

-250

-310

-1100

MAX.

UNIT

CONDITIONS.

=-100

IC=-1

A, RB

≤

Ω

=-10mA*

=-100

=-30V

=-30V, T

amb

=100°C

=-30V

=-30V, T

amb

=100°C

=-6V

=-0.5A, I

=-10mA*

=-2A, I

=-200mA*

=-4A, I

=-400mA*

=-5A, I

=-300mA*

=-5A, I

=-300mA*

BE(sat)

ZTX948

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer Ratio

SYMBOL

BE(on)

100

MIN.

TYP.

-860

200

160

130

163

120

126

MAX.

-1000

300

UNIT

CONDITIONS.

IC=-5A, V

=-1V*

=-10mA, V

=-1V

=-1A, V

=-1V*

=-5A, V

=-1V*

=-10A, V

=-1V*

=-20A, V

=-1V*

MHz

=-100mA, V

=-10V

f=50MHz

=-10V, f=1MHz

=-4A, I

=-400mA

=400mA, V

=-10V

Transition Frequency

Output Capacitance

Switching Times

obo

off

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance: Junction to Ambient

Junction to Case

SYMBOL

th(j-amb)

th(j-case)

MAX.

150

UNIT

°C/W

Max Power Dissipation - (Watts)

4.0

Thermal Resistance (°C/W)

150

D.C.

D=t

3.0

100

D=0.6

2.0

1.0

Amb

ient t

emp

eratu

-40 -20

20 40

D=0.2

D=0.1

60 80 100 120 140 160 180 200

0.0001

D=0.05

Single Pulse

0.001

0.01

0.1

100

T -Temperature

(°C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-310

ZTX948

TYPICAL CHARACTERISTICS

1.6

=50

=10

amb

=25°C

1.6

-55°C

+25°C

+175°C

=10

CE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

10 20

CE(sat)

- (Volts)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

10 20

Collector Current (Amps)

CE(sat)

v I

CE(sat)

v I

1.6

- Normalised Gain

- Typical Gain

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.001

+100°C

+25°C

-55°C

=1V

300

1.6

1.4

-55°C

+25°C

+100°C

+175°C

=10

BE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

200

100

0.01

0.1

10 20

0.001

0.01

0.1

10 20

Collector Current (Amps)

v I

100

-55°C

+25°C

+100°C

+175°C

BE(sat)

v I

Single Pulse Test at T

amb

=25°C

1.6

1.4

=1V

- Collector Current (Amps)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

10 20

D.C.

100ms

10ms

1.0ms

0.1ms

0.1

100

Collector Current (Amps)

Collector Voltage (Volts)

BE(on)

v I

Safe Operating Area

3-311

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