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K6F8016R6A-EF700

Description
Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48
Categorystorage    storage   
File Size158KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K6F8016R6A-EF700 Overview

Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48

K6F8016R6A-EF700 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA,
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time70 ns
JESD-30 codeR-PBGA-B48
length9 mm
memory density8388608 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals48
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
width7 mm
K6F8016R6A Family
Document Title
CMOS SRAM
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
0.1
Initial draft
Revise
- Change package type from FBGA to TBGA
Finalize
- Improved I
CC1
from 3 to 2mA
- Removed I
CC
, I
SB
Revise
- Errata correction for finalized year 2000 to 2001
Draft Date
August 21, 2000
September 28, 2000
Remark
Preliminary
Preliminary
1.0
February 15, 2001
Final
1.01
April 3, 2001
2.0
Revise
- Isb1 change : 15µA to 10µA
- IDR change : 8µA to 6µA
- Icc2 change : 25mA to 20mA for 70ns product
20mA to 18mA for 85ns product
- Remove "A1 Index Mark" of 48-TBGA package bottom side
- Changed 48-TBGA vertical dimension
A1(typical) 0.55mm to 0.58mm
A2(typical) 0.35mm to 0.32mm
September 27, 2001
Revise
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.00
September 2001

K6F8016R6A-EF700 Related Products

K6F8016R6A-EF700 K6F8016R6A-EF85 K6F8016R6A-EF850 K6F8016R6A-EF70
Description Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48 Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48 Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48 Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 7 X 9 MM, 0.75 MM PITCH, TBGA-48
Parts packaging code BGA BGA BGA BGA
package instruction VFBGA, VFBGA, BGA48,6X8,30 VFBGA, VFBGA, BGA48,6X8,30
Contacts 48 48 48 48
Reach Compliance Code unknown unknown unknown unknown
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 70 ns 85 ns 85 ns 70 ns
JESD-30 code R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
length 9 mm 9 mm 9 mm 9 mm
memory density 8388608 bit 8388608 bit 8388608 bit 8388608 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16
Number of functions 1 1 1 1
Number of terminals 48 48 48 48
word count 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
organize 512KX16 512KX16 512KX16 512KX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA VFBGA VFBGA VFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1 mm 1 mm 1 mm 1 mm
Maximum supply voltage (Vsup) 2.2 V 2.2 V 2.2 V 2.2 V
Minimum supply voltage (Vsup) 1.65 V 1.65 V 1.65 V 1.65 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form BALL BALL BALL BALL
Terminal pitch 0.75 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
width 7 mm 7 mm 7 mm 7 mm
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