V58C2512(804/404/164)SA*I
HIGH PERFORMANCE 512 Mbit DDR SDRAM
4 BANKS X 16Mbit X 8 (804)
4 BANKS X 32Mbit X 4 (404)
4 BANKS X 8Mbit X 16 (164)
5
DDR400
Clock Cycle Time (t
CK2
)
Clock Cycle Time (t
CK2.5
)
Clock Cycle Time (t
CK3
)
System Frequency (f
CK max
)
7.5 ns
6ns
5ns
200 MHz
6
DDR333
7.5 ns
6 ns
6 ns
166 MHz
Features
■
High speed data transfer rates with system frequency
up to 200MHz
■
Data Mask for Write Control
■
Four Banks controlled by BA0 & BA1
■
Programmable CAS Latency: 2, 2.5, 3
■
Programmable Wrap Sequence: Sequential
or Interleave
■
Programmable Burst Length:
2, 4, 8 for Sequential Type
2, 4, 8 for Interleave Type
■
Automatic and Controlled Precharge Command
■
Power Down Mode
■
Auto Refresh and Self Refresh
■
Refresh Interval: 8096 cycles/64 ms
■
Available in 60 Ball FBGA AND 66 Pin TSOP II
■
SSTL-2 Compatible I/Os
■
Double Data Rate (DDR)
■
Bidirectional Data Strobe (DQS) for input and output
data, active on both edges
■
On-Chip DLL aligns DQ and DQs transitions with CK
transitions
■
Differential clock inputs CK and CK
■
Power Supply 2.5V ± 0.2V
■
Power Supply 2.6V ± 0.1V for DDR400
■
tRAS lockout supported
■
Concurrent auto precharge option is supported
■
Industrial Temp (TA): -40C to +85C
*Note:
(-5) Supports PC3200 module with 3-3-3 timing
(-6) Supports PC2700 module with 2.5-3-3 timing
Description
The V58C2512(804/404/164)SA*I is a four bank DDR
DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x
32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164). The
V58C2512(804/404/164)SA*I achieves high speed data
transfer rates by employing a chip architecture that
prefetches multiple bits and then synchronizes the output
data to a system clock.
All of the control, address, circuits are synchronized
with the positive edge of an externally supplied clock. I/O
transactions are occurring on both edges of DQS.
Operating the four memory banks in an interleaved
fashion allows random access operation to occur at a
higher rate than is possible with standard DRAMs. A se-
quential and gapless data rate is possible depending on
burst length, CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
-40°C to +85°C
Package Outline
JEDEC 66 TSOP II
60 FBGA
•
CK Cycle Time (ns)
-5
•
Power
Std.
•
-6
•
L
•
Temperature
Mark
I
V58C2512(804/404/164)SA*I Rev.1.6 August 2007
1
ProMOS TECHNOLOGIES
Block Diagram
Column Addresses
A0 - A9, A11, AP, BA0, BA1
V58C2512(804/404/164)SA*I
64M x 8
Row Addresses
A0 - A12, BA0, BA1
Column address
counter
Column address
buffer
Row address
buffer
Refresh Counter
Row decoder
Memory array
Column decoder
Sense amplifier & I(O) bus
Column decoder
Sense amplifier & I(O) bus
Row decoder
Memory array
Bank 1
Row decoder
Memory array
Bank 2
Row decoder
Memory array
Bank 3
Bank 0
8192 x 2048
8192 x 2048
Column decoder
Sense amplifier & I(O) bus
8192 x 2048
Column decoder
Sense amplifier & I(O) bus
8192 x 2048
Input buffer
Output buffer
Control logic & timing generator
DQ
0
-DQ
7
CKE
RAS
CAS
WE
CK, CK
DLL
Strobe
Gen.
Data Strobe
DM
CK
CK
CS
DQS
V58C2512(804/404/164)SA*I Rev. 1.6 August 2007
5
RF/Wirelessly
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