PHOTOCOUPLER
PS2535-1,PS2535L-1
HIGH COLLECTOR TO EMITTER VOLTAGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SERIES
−NEPOC
Series−
DESCRIPTION
The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington connected phototransistor.
A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor,
and darlington transistor output enables low-current input.
The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
• High collector to emitter voltage (V
CEO
= 350 V)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 1 500 % TYP.)
• Ordering number of taping product: PS2535L-1-E3, E4, F3, F4
• Safety standards
• UL approved: File No. E72422
• BSI approved: No. 8221/8222
• DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
Document No. PN10447EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
The mark
shows major revised points.
PS2535-1,PS2535L-1
PACKAGE DIMENSIONS (Unit : mm)
DIP Type (New package)
PS2535-1
4.6±0.35
4
Lead Bending Type (New package)
PS2535L-1
4.6±0.35
TOP VIEW
3
1. Anode
2. Cathode
3. Emitter
4. Collector
TOP VIEW
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
6.5±0.5
1
2
7.62
6.5±0.5
1
2
3.2±0.4
4.15±0.4
3.5±0.3
0.25
+0.1
–0.05
1.25±0.15
0 to 15˚
+0.1
0.25
–0.05
3.5±0.3
1.25±0.15
0.50±0.10
0.25
M
0.25
M
2.54
0.15
0.9±0.25
9.60±0.4
2.54
DIP Type
PS2535-1
4.6±0.5
4
Lead Bending Type
PS2535L-1
4.6±0.5
TOP VIEW
3
1. Anode
2. Cathode
3. Emitter
4. Collector
TOP VIEW
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
6.5±0.5
1
2
7.62
6.5±0.5
1
2
3.3±0.5
4.15±0.4
3.5±0.3
0.25
+0.1
–0.05
1.25±0.15
0 to 15˚
+0.1
0.25
–0.05
3.5±0.3
1.25±0.15
0.50±0.10
0.25
M
0.25
M
2.54
0.15
0.9±0.25
9.60±0.4
2.54
2
Data Sheet PN10447EJ02V0DS
0.1
+0.1
–0.05
0.1
+0.1
–0.05
PS2535-1,PS2535L-1
MARKING EXAMPLE
No. 1 pin
Mark
2535
NL601
Assembly Lot
N L
6 01
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Standard PKG
New PKG
Made in Japan Made in Taiwan
L
J
N
Data Sheet PN10447EJ02V0DS
3
PS2535-1,PS2535L-1
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
PS2535-1
PS2535L-1
PS2535L-1-E3
PS2535L-1-E4
PS2535L-1-F3
PS2535L-1-F4
PS2535-1-V
PS2535L-1-V
PS2535L-1-V-E3
PS2535L-1-V-E4
PS2535L-1-V-F3
PS2535L-1-V-F4
PS2535-1-A
PS2535L-1-A
PS2535L-1-E3-A
PS2535L-1-E4-A
PS2535L-1-F3-A
PS2535L-1-F4-A
PS2535-1-V-A
PS2535L-1-V-A
PS2535L-1-V-E3-A
PS2535L-1-V-E4-A
PS2535L-1-V-F3-A
PS2535L-1-V-F4-A
Embossed Tape 2 000 pcs/reel
Embossed Tape 1 000 pcs/reel
Magazine case 100 pcs
DIN EN60747-5-2
(VDE0884 Part2)
Approved (Option)
Embossed Tape 2 000 pcs/reel
Embossed Tape 1 000 pcs/reel
Pb-Free
Magazine case 100 pcs
Packing Style
Safety Standard
Approval
Standard products
(UL, BSI approved)
Application Part
*1
Number
PS2535-1
*1
For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Parameter
Diode
Forward Current (DC)
Reverse Voltage
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Symbol
I
F
V
R
Ratings
50
6
0.7
70
0.5
350
0.3
120
2.0
200
5 000
−55
to +100
−55
to +150
Unit
mA
V
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
∆
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
∆
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1%
*2
AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10447EJ02V0DS
PS2535-1,PS2535L-1
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Coupled
Collector to Emitter
Dark Current
Current Transfer Ratio
*1
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
Symbol
V
F
I
R
C
t
I
CEO
CTR
V
CE (sat)
R
I-O
C
I-O
t
r
t
f
I
F
= 10 mA
V
R
= 5 V
Conditions
MIN.
TYP.
1.2
MAX.
1.4
5
Unit
V
µ
A
pF
V = 0 V, f = 1.0 MHz
V
CE
= 350 V, I
F
= 0 mA
I
F
= 1 mA, V
CE
= 2 V
I
F
= 1 mA, I
C
= 2 mA
V
I-O
= 1.0 kV
DC
V = 0 V, f = 1.0 MHz
V
CC
= 5 V, I
C
= 10 mA, R
L
= 100
Ω
10
11
15
400
400
1 500
5 500
1.0
nA
%
V
Ω
0.6
18
5
pF
µ
s
*2
*1
CTR rank
N : 400 to 5 500 (%)
L : 1 500 to 5 500 (%)
*2
Test circuit for switching time
Pulse input
I
F
PW = 1 ms,
Duty cycle = 1/10
In monitor
50
Ω
V
OUT
R
L
= 100
Ω
V
CC
Data Sheet PN10447EJ02V0DS
5
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