A Business Partner of Renesas Electronics Corporation.
Preliminary
PS2561F-1,PS2561FL-1
DIP PHOTOCOUPLER, OPERATING AMBIENT TEMPERATURE 110°C
<R>
Data Sheet
R08DS0033EJ0100
Rev.1.00
Jan 06, 2012
DESCRIPTION
The PS2561F-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
The PS2561F-1 is in a plastic DIP (Dual In-line Package) and the PS2561FL-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
•
•
•
•
•
•
•
•
Operating ambient temperature: 110°C
High Isolation voltage (BV = 5 000 Vr.m.s.)
High collector to emitter voltage (V
CEO
= 80 V)
High current transfer ratio (CTR = 450% TYP.)
High-speed switching (t
r
= 5
μ
s TYP., t
f
= 7
μ
s TYP.)
Embossed tape product: PS2561FL-1-F3 : 2 000 pcs/reel
Pb-Free product
Safety standard
•
UL approved: No. E72422
PIN CONNECTION
(Top View)
4 3
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1 2
1. Anode
2. Cathode
3. Emitter
4. Collector
APPLICATIONS
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•
•
•
•
Power meter
Telephone/FAX.
FA/OA equipment
Programmable logic controller
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0033EJ0100 Rev.1.00
Jan 06, 2012
Page 1 of 13
A Business Partner of Renesas Electronics Corporation.
PS2561F-1,PS2561FL-1
<R>
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
DIP Type
PS2561F-1
4.6±0.35
4 3
6.5±0.5
1 2
3.2±0.4 4.15±0.4
3.5±0.3
7.62
1.25±0.15
2.54
0.50±0.10
0.25
M
0 to 15°
+0.1
0.25
–0.05
Lead Bending Type
PS2561FL-1
4.6±0.35
4
3
6.5±0.5
1
3.5±0.3
2
0.25
+0.1
–0.05
0.1
+0.1
–0.05
0.9±0.25
9.60±0.4
1.25±0.15
0.25
M
2.54
0.15
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PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance (MIN.)
Outer Creepage Distance (MIN.)
Inner Creepage Distance (MIN.)
Isolation Distance (MIN.)
PS2561F-1, PS2561FL-1
7 mm
7 mm
4 mm
0.4 mm
R08DS0033EJ0100 Rev.1.00
Jan 06, 2012
Page 2 of 13
A Business Partner of Renesas Electronics Corporation.
PS2561F-1,PS2561FL-1
<R>
Chapter Title
MARKING EXAMPLE
No. 1 pin
Mark
R
2561F
KR131
Company Initial
Type Number
Assembly Lot
K
R
1 31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
Pb-Free and
Halogen Free
New PKG
Made in Japan Made in Taiwan
R
Y
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ORDERING INFORMATION
Part Number
PS2561F-1
PS2561FL-1
PS2561FL-1-F3
Note:
Order Number
PS2561F-1Y-A
PS2561FL-1Y-A
PS2561FL-1Y-F3-A
Solder Plating
Specification
Pb-Free and
Halogen Free
Packing Style
Magazine case 100 pcs
Embossed Tape
2 000 pcs/reel
Safety Standard
Approval
Standard
products
(UL approved)
Application
*1
Part Number
PS2561F-1
PS2561FL-1
*1. For the application of the Safety Standard, following part number should be used.
R08DS0033EJ0100 Rev.1.00
Jan 06, 2012
Page 3 of 13
A Business Partner of Renesas Electronics Corporation.
PS2561F-1,PS2561FL-1
Chapter Title
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Parameter
Diode
Reverse Voltage
Forward Current (DC)
Power Dissipation Derating
Power Dissipation
Peak Forward Current
*1
Transistor
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
Symbol
V
R
I
F
Δ
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Δ
P
C
/°C
P
C
BV
T
A
T
stg
Ratings
6
30
1.5
150
1
80
7
50
1.5
150
5 000
−55
to +110
−55
to +150
Unit
V
mA
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
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Notes: *1. PW = 100
μ
s, Duty Cycle = 1%
*2. AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0033EJ0100 Rev.1.00
Jan 06, 2012
Page 4 of 13
A Business Partner of Renesas Electronics Corporation.
PS2561F-1,PS2561FL-1
<R>
Chapter Title
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Diode
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector to Emitter Dark
Current
Current Transfer Ratio
*1
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
*2
Fall Time
*2
Notes: *1. CTR rank
CTR Rank
K
CTR (%)
300 to 600
60 and larger
Symbol
V
F
I
R
C
t
I
CEO
CTR
V
CE (sat)
R
I-O
C
I-O
t
r
t
f
Conditions
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1.0 MHz
I
F
= 0 mA, V
CE
= 80 V
I
F
= 5 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
I
F
= 10 mA, I
C
= 2 mA
V
I-O
= 1.0 kV
DC
V = 0 V, f = 1.0 MHz
V
CC
= 10 V, I
C
= 2 mA,
R
L
= 100
Ω
Conditions
I
F
= 5 mA, V
CE
= 5 V
I
F
= 1 mA, V
CE
= 5 V
MIN.
TYP.
1.2
10
100
300
60
450
600
0.3
10
11
0.5
5
7
18
18
MAX.
1.4
5
Unit
V
μ
A
pF
nA
%
V
Ω
pF
μ
s
Transistor
Coupled
*2. Test circuit for switching time
Pulse Input
PW = 100
μ
s
Duty Cycle = 1/10
I
F
50
Ω
V
OUT
R
L
= 100
Ω
V
CC
Input
t
d
t
on
t
s
t
off
90%
Output
10%
t
r
t
f
R08DS0033EJ0100 Rev.1.00
Jan 06, 2012
Page 5 of 13
Embedded System
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