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STGWT20V60DF

Description
IGBT
Categorysemiconductor    Discrete semiconductor   
File Size2MB,23 Pages
ManufacturerETC2
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STGWT20V60DF Overview

IGBT

STGWT20V60DF Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeINSULATED GATE BIPOLAR
STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet
-
production data
TAB
TAB
Features
Maximum junction temperature: T
J
= 175 °C
Very high speed switching series
3
2
1
1
3
Tail-less switching off
Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
3
TO-220
TAB
D²PAK
3
2
1
1
2
Very fast soft recovery antiparallel diode
Lead free package
TO-247
TO-3P
Figure 1. Internal schematic diagram
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Table 1. Device summary
Order code
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
June 2013
This is information on a product in full production.
Marking
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
Package
D²PAK
TO-220
TO-247
TO-3P
Packaging
Tape and reel
Tube
Tube
Tube
1/23
www.st.com
23
DocID024360 Rev 3

STGWT20V60DF Related Products

STGWT20V60DF STGB20V60DF STGP20V60DF STGW20V60DF
Description IGBT IGBT IGBT IGBT
state ACTIVE ACTIVE ACTIVE ACTIVE
Transistor type INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR
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