STGB20V60DF, STGP20V60DF,
STGW20V60DF, STGWT20V60DF
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet
-
production data
TAB
TAB
Features
•
Maximum junction temperature: T
J
= 175 °C
•
Very high speed switching series
3
2
1
1
3
•
Tail-less switching off
•
Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
•
Tight parameters distribution
•
Safe paralleling
•
Low thermal resistance
3
TO-220
TAB
D²PAK
3
2
1
1
2
•
Very fast soft recovery antiparallel diode
•
Lead free package
TO-247
TO-3P
Figure 1. Internal schematic diagram
Applications
•
Photovoltaic inverters
•
Uninterruptible power supply
•
Welding
•
Power factor correction
•
Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
Table 1. Device summary
Order code
STGB20V60DF
STGP20V60DF
STGW20V60DF
STGWT20V60DF
June 2013
This is information on a product in full production.
Marking
GB20V60DF
GP20V60DF
GW20V60DF
GWT20V60DF
Package
D²PAK
TO-220
TO-247
TO-3P
Packaging
Tape and reel
Tube
Tube
Tube
1/23
www.st.com
23
DocID024360 Rev 3
Contents
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
DocID024360 Rev 3
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
V
CES
I
C
I
C
I
CP(1)
V
GE
I
F
I
F
I
FP(1)
P
TOT
T
STG
T
J
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature
Value
600
40
20
80
±20
40
20
80
167
- 55 to 150
- 55 to 175
Unit
V
A
A
A
V
A
A
A
W
°C
°C
1. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3. Thermal data
Symbol
R
thJC
R
thJC
R
thJA
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.9
2.08
50
Unit
°C/W
°C/W
°C/W
DocID024360 Rev 3
3/23
Electrical characteristics
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
V
GE
= 15 V, I
C
= 20 A
600
V
1.8
2.15
2.2
V
CE(sat)
V
GE
= 15 V, I
C
= 20 A
Collector-emitter saturation
T
J
= 125 °C
voltage
V
GE
= 15 V, I
C
= 20 A
T
J
= 175 °C
I
F
= 20 A
V
2.3
1.7
1.55
1.3
5
6
7
25
2.2
V
V
V
V
μA
V
F
Forward on-voltage
I
F
= 20 A T
J
= 125 °C
I
F
= 20 A T
J
= 175 °C
V
GE(th)
I
CES
I
GES
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
V
CE
= V
GE
, I
C
= 1 mA
V
CE
= 600 V
V
GE
= ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CC
= 480 V, I
C
= 20 A,
V
GE
= 15 V, see
Figure 29
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
Test conditions
Min.
-
-
-
-
-
-
Typ.
2800
110
64
116
24
50
Max.
-
-
-
-
-
-
Unit
pF
pF
pF
nC
nC
nC
4/23
DocID024360 Rev 3
STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(off)
t
f
E
on(1)
E
off(2)
E
ts
t
d(on)
t
r
(di/dt)
on
t
d(off)
t
f
E
on(1)
E
off(2)
E
ts
1.
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on delay time
Current rise time
Turn-on current slope
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
Min.
-
-
-
Typ.
38
10
1556
149
15
200
130
330
37
12
1340
150
23
430
210
640
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
A/μs
ns
ns
μJ
μJ
μJ
ns
ns
A/μs
ns
ns
μJ
μJ
μJ
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V,
see
Figure 28
-
-
-
-
-
-
-
-
V
CE
= 400 V, I
C
= 20 A,
di/dt = 1000 A/μs,
V
GE
= 15 V,
T
J
= 175 °C, see
Figure 28
-
-
-
-
-
Energy losses include reverse recovery of the diode.
2. Turn-off losses include also the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
t
rr
Q
rr
I
rrm
dI
rr/
/dt
E
rr
t
rr
Q
rr
I
rrm
dI
rr/
/dt
E
rr
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during t
b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse
recovery current during t
b
Reverse recovery energy
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V,
T
J
= 175 °C, see
Figure 28
di/dt = 1000 A/μs
I
F
= 20 A, V
R
= 400 V,
V
GE
= 15 V, see
Figure 28
di/dt = 1000 A/μs
Test conditions
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
40
320
16
910
115
72
930
26
530
307
Max.
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
A
A/μs
μJ
ns
nC
A
A/μs
μJ
DocID024360 Rev 3
5/23
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