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BF570

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size294KB,7 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BF570 Overview

Small Signal Bipolar Transistor

BF570 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
Reach Compliance Codecompliant
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Terminal surfaceTin (Sn)
Maximum time at peak reflow temperature30

BF570 Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
BF570
NPN medium frequency transistor
Product data sheet
Supersedes data of 2004 Jan 13
2004 Mar 15
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
FEATURES
Low current (max. 100 mA)
Low voltage (max. 15 V)
Low feedback capacitance (max. 2.2 pF).
APPLICATIONS
Monitors
Battery equipped applications.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
1
handbook, halfpage
BF570
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BF570
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BF570
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
Fig.1
Simplified outline (SOT23) and symbol.
MARKING
CODE
(1)
Top view
1
2
MAM255
2
61* or B26
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
T
amb
25
°C
I
C
= 10 mA; V
CE
= 1 V
I
C
= 40 mA; V
CE
= 10 V; f = 100 MHz
open emitter
open base
CONDITIONS
40
490
MIN.
MAX.
40
15
200
250
MHz
V
V
mA
mW
UNIT
2004 Mar 15
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
25
°C
CONDITIONS
open emitter
open base
open collector
−65
−65
MIN.
MAX.
40
15
4.5
100
200
250
+150
150
+150
BF570
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
VALUE
500
UNIT
K/W
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
C
re
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
feedback capacitance
transition frequency
CONDITIONS
I
E
= 0 A; V
CB
= 20 V
I
E
= 0 A; V
CB
= 20 V; T
j
= 125
°C
I
C
= 0 A; V
EB
= 2 V
I
C
= 10 mA; V
CE
= 1 V
I
C
= 0 A; V
CE
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 40 mA; V
CE
= 10 V; f = 100 MHz
MIN.
40
500
490
TYP.
1.6
MAX.
400
30
100
2.2
pF
MHz
MHz
UNIT
nA
µA
nA
2004 Mar 15
3
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BF570
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Mar 15
4

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Humidity sensitivity level 1 1
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