EEWORLDEEWORLDEEWORLD

Part Number

Search

2A06GHB0

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-204AC, DO-15, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size197KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

2A06GHB0 Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-204AC, DO-15, 2 PIN

2A06GHB0 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionDO-15, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-204AC
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current70 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
2A01G thru 2A07G
CREAT BY ART
FEATURES
- Glass passivated chip junction
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Rectifiers
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.4g (approximately)
DO-204AC (DO-15)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@2A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θJC
R
θJL
R
θJA
T
J
T
STG
1.1
5
100
15
22
25
60
- 55 to +150
- 55 to +150
O
2A
01G
50
35
50
2A
02G
100
70
100
2A
03G
200
140
200
2A
04G
400
280
400
2
70
2A
05G
600
420
600
2A
06G
800
560
800
2A
07G
1000
700
1000
UNIT
V
V
V
A
A
1.0
V
μA
pF
C/W
O
O
C
C
Document Number: DS_D1405014
Version: H14

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2759  2773  3  2372  381  56  1  48  8  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号