BCX70G-AG datasheet, PDF - EEWORLD Datasheet

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BCX70G-AG: Description200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size58KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCX70G-AG Overview

200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCX70G-AG Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum on-time	150 ns
Maximum off time	800 ns
Maximum collector current	0.2000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	SOT-23, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
Transistor component materials	SILICON
Maximum ambient power consumption	0.3500 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	60
Rated crossover frequency	125 MHz

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BCX70

E

ISSUE 2 FEBRUARY 95

PARTMARKING DETAIL

C

B

MAX. UNIT CONDITIONS.

SOT23 NPN SILICON PLANAR

SMALL SIGNAL TRANSISTOR

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

V

I

EBO

=1

µ

A

V

CES

=45V

V

CES

=45V,

T

amb

=150oC

V

EBO

=4V

COMPLEMENTARY TYPE

I

C

=10mA,I

B

= 0.25mA

I

C

= 50mA, I

B

=1.25mA

20

µ

A

PARAMETER

SYMBOL

MIN. TYP.

Collector-Emitter Breakdown Voltage

I

C

=2mA

nA

V

(BR)CEO

45

Emitter-Base Breakdown Voltage

V

(BR)EBO

5

Collector-Emitter Cut-off Current

20

0.12

0.20

0.35

0.55

V

nA

I

CES

Emitter-Base Cut-Off Current

I

EBO

Collector-Emitter

Saturation Voltage

V

CE(sat)

BCX70G

BCX70H

BCX70J

BCX70K

BCX70GR

BCX70HR

BCX70JR

BCX70KR

BCX71

SYMBOL

V

CES

V

CEO

V

EBO

I

C

I

B

P

TOT

tj:tstg

VALUE

45

5

200

50

330

-55 to +150

AG

AH

AJ

AK

AW

9P

AX

P9

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

UNIT

V

mA

mW

°C

Base-Emitter

Saturation Voltage

0.52

0.65

0.78

0.75

220

310

460

630

MHz

h

12e

h

21e

h

22e

pF

4.5

2

6

dB

I

C

= 0.2mA, V

CE

= 5V

R

G

=2K

Ω,

f=1KH

∆

f=200Hz

pF

V

CBO

=10V, f =1MHz

V

EBO

=0.5V, f =1MHz

h

11e

1.6

I

C

=10mA, V

CE

=5V

f = 100MHz

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=50mA, V

CE

=1V

Min.

Typ.

2.7

1.5

200

18

30

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=50mA, V

CE

=1V

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=50mA, V

CE

=1V

h

FE

Group G

Max.

4.5

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=50mA, V

CE

=1V

I

C

=10

µ

A, V

CE

=5V

I

C

=2mA, V

CE

=5V

I

C

=50mA, V

CE

=1V

78

170

145

250

220

350

300

500

250

8

V

BE(SAT)

0.60

0.70

0.83

0.85

1.05

V

I

C

=10mA,I

B

=0.25mA,

I

C

=50mA, I

B

=1.25mA

Base - Emitter Voltage

V

BE

0.55

Static Forward Current

Transfer Ratio

BCX70G

h

FE

120

50

BCX70H

h

FE

20

180

70

BCX70J

h

FE

FOUR TERMINAL NETWORK DATA (I

c

=2mA, V

CE

=5V, f=1kHz)

h

FE

Group H

Min.

2.5

Typ.

3.6

2

260

24

50

Max.

6.0

h

FE

Group J

Min.

3.2

Typ.

4.5

2

330

30

60

Max.

8.5

h

FE

Group K

Min.

4.5

Typ.

7.5

3

520

50

100

µ

S

40

250

90

BCX70K

h

FE

100

380

100

Max.

12

k

Ω

10

-4

Transition Frequency

f

T

125

Emitter-Base Capacitance

C

ebo

Collector-Base Capacitance

C

cbo

Noise Figure

N

SWITCHING CIRCUIT

-V

BB

V

CC

(+10V)

150

800

Switching times:

Delay Time

Rise Time

Turn-on Time

Storage Time

Fall Time

Turn-Off Time

35

50

85

400

80

480

ns

I

C

:I

B1

:- I

B2

=10:1:1mA

R

1

=5K

Ω,

R

2

=5K

Ω

V

BB

=3.6V, R

L

=990

Ω

R

2

R

L

t

d

t

r

t

on

t

s

t

f

t

off

1

µ

sec

+10V

t

r

< 5nsec

Mark/Space ratio < 0.01

Z

s

=50

Ω

50

Ω

R

1

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

Spice parameter data is available upon request for this device

t

r

< 5nsec

Z

in

≥

100k

Ω

Oscilloscope

PAGE NO

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