S25FL032P0XDEV004 datasheet, PDF

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S25FL032P0XDEV004: DescriptionFlash, 32MX1, 2.92 X 3.96 MM, DIE-8; Categorystorage storage; File Size486KB，10 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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S25FL032P0XDEV004 Overview

Flash, 32MX1, 2.92 X 3.96 MM, DIE-8

S25FL032P0XDEV004 Parametric

Parameter Name	Attribute value
Maker	SPANSION
Parts packaging code	DIE
package instruction	2.92 X 3.96 MM, DIE-8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum clock frequency (fCLK)	100 MHz
JESD-30 code	R-XUUC-N8
memory density	33554432 bit
Memory IC Type	FLASH
memory width	1
Number of functions	1
Number of terminals	8
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	32MX1
Package body material	UNSPECIFIED
encapsulated code	DIE
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Parallel/Serial	SERIAL
Programming voltage	3 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	NO LEAD
Terminal location	UPPER
type	NOR TYPE

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S25FL032P Known Good Die

32-Mbit CMOS 3.0 Volt Flash Memory with

100-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

Supplement

Distinctive Characteristics

Architectural Advantages

Single power supply operation

– Full voltage range: 2.7 to 3.6V read and write operations

One time programmable (OTP) area for permanent, secure

identification; can be programmed and locked at the factory

CFI (Common Flash Interface) compliant: allows host system

to identify and accommodate multiple flash devices

Process technology

– Manufactured on 0.09 µm MirrorBit

process technology

Memory architecture

– Uniform 64 KB sectors

– Top or bottom parameter block (Two 64-KB sectors (top or bottom)

broken down into sixteen 4-KB sub-sectors each)

– 256-byte page size

– Backward compatible with the S25FL032A device

Tested to data sheet specifications at temperature

Quality and reliability levels equivalent to standard

packaged components

Program

–

Page Program (up to 256 bytes) in 1.5 ms (typical)

Program operations are on a page by page basis

Accelerated programming mode via 9V W#/ACC pin

Quad Page Programming

Bulk erase function

Sector erase (SE) command (D8h) for 64 KB sectors

Sub-sector erase (P4E) command (20h) for 4 KB sectors

Sub-sector erase (P8E) command (40h) for 8 KB sectors

Performance Characteristics

Speed

– Normal READ (Serial): 40 MHz clock rate

– FAST_READ (Serial): 100 MHz clock rate (maximum)

– DUAL I/O FAST_READ: 80 MHz clock rate or 20 MB/s effective data

rate

– QUAD I/O FAST_READ: 80 MHz clock rate or 40 MB/s effective

data rate

Erase

Power saving standby mode

– Standby Mode 80 µA (typical)

– Deep Power-Down Mode 3 µA (typical)

Cycling endurance

– 100,000 cycles per sector typical

Data retention

– 20 years typical

Memory Protection Features

Memory Protection

– W#/ACC pin works in conjunction with Status Register Bits to

protect specified memory areas

– Status Register Block Protection bits (BP2, BP1, BP0) in status

Device ID

– JEDEC standard two-byte electronic signature

– RES command one-byte electronic signature for backward

compatibility

General Description

The S25FL032P in Known Good Die (KGD) form is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device.

Spansion defines KGD as standard product in die form, tested for functionality and speed. Spansion KGD products have the

same reliability and quality as Spansion products in packaged form.

S25FL032P Features

The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform

64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P

device is fully backward compatible with the S25FL032A device.

The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be

programmed in-system with the standard system 3.0-volt V

supply.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector

Erase and Bulk Erase commands. Each device requires only a 3.0 volt power supply (2.7 V to 3.6 V) for both read and write

functions. Internally generated and regulated voltages are provided for the program operations. This device requires a high

voltage supply to the W#/ACC pin to enable the Accelerated Programming mode.

Electrical Specifications

Refer to the S25FL032P data sheet, publication number S25FL032P_00, for full electrical specifications on the S25FL032P in

KGD form.

Publication Number

S25FL032P_KGD_SP

Revision

Issue Date

Febuary 5, 2010

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