ZVNL120GTC datasheet, PDF - EEWORLD Datasheet

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ZVNL120GTC: DescriptionPower Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size527KB，6 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

ZVNL120GTC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	SOT-223
package instruction	SOT-223, 4 PIN
Contacts	4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	0.32 A
Maximum drain-source on-resistance	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	2 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

ZVNL120GTC Preview

Green

ZVNL120G

200V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

10Ω @ V

GS

= 10V

I

D

T

A

= +25°

C

320mA

Features and Benefits



High Voltage

Low On-resistance

Fast Switching Speed

Low Gate Drive

Low Threshold

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

200V

Description

This new generation trench MOSFET features a unique structure

combining the benefits of low on-resistance and fast switching,

making it ideal for high efficiency power management applications.

Mechanical Data



Case: SOT223

Case Material: Molded Plastic, “Green” Molding Compound; UL

Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish

Weight: 0.112 grams (Approximate)

Applications



Off-line Power Supply Start-up Circuitry

SOT223

D

G

S

Top View

Pin Out - Top

View

Equivalent Circuit

Ordering Information

(Note 4)

Part Number

ZVNL120GTA

ZVNL120GTC

Notes:

Marking

ZVNL120

Reel size (inches)

7

13

Tape width (mm)

12

Quantity per reel

1,000

4,000

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SOT223

ZVN

ZVNL

120

4310

ZVNL120 = Product Type Marking Code

YWW = Date Code Marking

Y or Y = Last Digit of Year (ex: 5 = 2015)

WW or WW = Week Code (01~53)

YWW

ZVNL120G

Document number: DS33388 Rev. 3 - 2

1 of 6

www.diodes.com

March 2015

ZVNL120G

Maximum Ratings

(@T

A

= +25° unless otherwise specified.)

C,

Characteristic

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

(V

GS

= 10V, T

A

= +25°

C)

Pulsed Drain Current

Symbol

V

DSS

V

GSS

I

D

I

DM

Value

200

±20

320

2

Unit

V

mA

A

Thermal Characteristics

(@T

A

= +25° unless otherwise specified.)

C,

Characteristic

Power Dissipation at T

A

= +25° (Note 5)

C

Operating and Storage Temperature Range

Symbol

P

D

T

J

,

T

STG

Value

2.0

-55 to +150

Unit

W

°

C

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS

Gate Threshold Voltage

(@T

A

= +25° unless otherwise specified.)

C,

Symbol

BV

DSS

I

DSS

I

GSS

V

GS(TH)

R

DS(ON)

g

fs

I

D(ON)

Min

200

-

0.5

-

200

500

-

Typ

-

Max

-

10

100

1.5

10

-

85

20

7

8

20

12

Unit

V

µA

nA

V

Ω

mS

mA

Test Condition

V

GS

= 0V, I

D

= 1mA

V

DS

= 200V, V

GS

= 0V

V

DS

= 160V, V

GS

= 0V, T = +125°

C

V

GS

= ±20V, V

DS

= 0V

V

DS

= V

GS

, I

D

= 1mA

V

GS

= 5V, I

D

= 250mA

V

GS

= 3V, I

D

= 125mA

V

DS

= 25V, I

D

= 250mA

V

DS

= 25V,

V

GS

= 5V

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

Static Drain-Source On-Resistance (Note 6)

Forward Transconductance (Notes 6 & 7)

On-State Drain Current (Note 6)

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time (Note 8)

Turn-On Rise Time (Note 8)

Turn-Off Delay Time (Note 8)

Turn-Off Fall Time (Note 8)

Notes:

C

iss

C

oss

C

rss

t

D(ON)

t

R

t

D(OFF)

t

F

pF

ns

V

DD

= 25V, I

D

= 250mA

5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

6.

Measured under pulsed conditions. Pulse width≦300

µ

s. Duty cycle

≦2%.

7. Sample test.

8.

Switching times measured with 50source impedance and <5ns rise time on a pulse generator.

ZVNL120G

Document number: DS33388 Rev. 3 - 2

2 of 6

www.diodes.com

March 2015

ZVNL120G

Document number: DS33388 Rev. 3 - 2

3 of 6

www.diodes.com

March 2015

ZVNL120G

Document number: DS33388 Rev. 3 - 2

4 of 6

www.diodes.com

March 2015

ZVNL120G

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

D

b1

Q

C

E

Gauge

Plane

E1

0.25

Seating

Plane

L

e1

e

b

0°

° -1

0

SOT223

Dim Min Max Typ

A

1.55 1.65 1.60

A1

0.010 0.15 0.05

b

0.60 0.80 0.70

b1

2.90 3.10 3.00

C

0.20 0.30 0.25

D

6.45 6.55 6.50

E

3.45 3.55 3.50

E1

6.90 7.10 7.00

e

-

4.60

e1

-

2.30

L

0.85 1.05 0.95

Q

0.84 0.94 0.89

All Dimensions in mm

A

A1

7°

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X1

Y1

7°

C1

Y2

Dimensions Value (in mm)

C

2.30

C1

6.40

X

1.20

X1

3.30

Y

1.60

Y1

1.60

Y2

8.00

Y

X

C

ZVNL120G

Document number: DS33388 Rev. 3 - 2

5 of 6

www.diodes.com

March 2015

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ZVNL120GTC Related Products

	ZVNL120GTC	ZVNL120GTA
Description	Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN	Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Is it Rohs certified?	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	SOT-223	SOT-223
package instruction	SOT-223, 4 PIN	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (ID)	0.32 A	0.32 A
Maximum drain-source on-resistance	10 Ω	10 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	2 A	2 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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