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Datasheet> All Categories > Discrete semiconductor> The transistor> ZXMN4A06GTC
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ZXMN4A06GTC

Description
Power Field-Effect Transistor, 5A I(D), 40V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size505KB，7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

ZXMN4A06GTC Overview

Power Field-Effect Transistor, 5A I(D), 40V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

ZXMN4A06GTC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-223
package instructionSOT-223, 4 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)7 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.9 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

ZXMN4A06GTC Preview

Green
ZXMN4A06G
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
40V
R
DS(ON)
0.05Ω @ V
GS
= 10V
I
D
T
A
= +25°C
7A
Features
Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCED INFORMATION
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.112 grams (approximate)
Applications
DC-DC Converters
Audio Output Stages
Relay and Solenoid driving
Motor Control
SOT223
D
G
S
Top View
Pin Out - Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMN4A06GTA
ZXMN4A06GTC
Note:
Compliance
Standard
Standard
Case
SOT223
SOT223
Packaging
1,000/Tape & Reel
4,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZXMN
4A06
ZXMN = Product Type Marking Code, Line 1
4A06 = Product Type Marking Code, Line 2
ZXMN4A06G
Document number: DS33545 Rev. 2 - 2
1 of 7
www.diodes.com
November 2013
© Diodes Incorporated
ZXMN4A06G
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 10V
(Note 6)
T
A
= +70°C (Note 6)
(Note 5)
(Note 7)
(Note 6)
(Note 7)
Symbol
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
Value
40
20
7
5.6
5
22
5.4
22
Unit
V
V
A
A
A
A
ADVANCED INFORMATION
Pulsed Drain Current
V
GS
= 10V
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
Symbol
(Note 5)
(Note 6)
(Note 7)
(Note 6)
P
D
R
θJA
T
J
, T
STG
Value
2
16
3.9
31
62.5
32.2
-55 to +150
Unit
W
mW/C
C/W
C
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t
≦
5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature.
Thermal Characteristics
ZXMN4A06G
Document number: DS33545 Rev. 2 - 2
2 of 7
www.diodes.com
November 2013
© Diodes Incorporated
ZXMN4A06G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
fs
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
40
1
Typ
8.7
0.8
19.86
16.36
770
92
61
18.2
2.1
4.5
2.55
4.45
28.61
7.35
Max
1
100
0.05
0.075
0.95
Unit
V
µA
nA
V
Ω
S
V
ns
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 2.5A, R
G
6
(refer to test circuit)
Test Condition
I
D
= 250µA, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V
V
GS
=
20V,
V
DS
= 0V
I
D
= 250A, V
DS
= V
GS
V
GS
= 10V, I
D
= 4.5A
V
GS
= 4.5V, I
D
= 3.2A
V
DS
= 15V, I
D
= 2.5A
I
S
= 2.5A, V
GS
= 0V, T
J
= +25°C
I
F
= 2.5A, di/dt = 100A/µs,
T
J
= +25°C
ADVANCED INFORMATION
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 11)
Diode Forward Voltage (Note 9)
Reverse recovery time (Note 11)
Reverse recovery charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
Notes:
V
DS
= 40V, V
GS
= 0V
f = 1MHz
V
DS
= 30V, V
GS
= 10V,
I
D
= 2.5A
(refer to test circuit)
9. Measured under pulsed conditions. Pulse width
300µs; duty cycle
2%.
10. Switching characteristics are independent of operating junction temperatures.
11. For design aid only, not subject to production testing.
ZXMN4A06G
Document number: DS33545 Rev. 2 - 2
3 of 7
www.diodes.com
November 2013
© Diodes Incorporated
ZXMN4A06G
Typical Characteristics
ADVANCED INFORMATION
ZXMN4A06G
Document number: DS33545 Rev. 2 - 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
ZXMN4A06G
Typical Characteristics –
(cont.)
ADVANCED INFORMATION
ZXMN4A06G
Document number: DS33545 Rev. 2 - 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
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